硒镉掺杂砷化镓单晶中通过EL2心的辐射复合
Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium
摘要：
本文研究了Cd和Se原子对砷化镓单晶EL_2缺陷光子发射量子效率的影响。在真空和砷气氛中的杂质扩散的比较技术已被使用。光子发射量子效率的变化特征和程度被确定为由晶体的空位结构所定义，这最有可能是由EL 2-掺杂剂络合物的形成引起的。
英文摘要：
Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emission quantum efficiency have been established to be defined by vacancy structure of crystal that is most likely caused by formation of EL2-dopant complexes.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
