Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin relaxation times in GaAs and CdTe quantum wells.
We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenides in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the spin relaxation rate using the multi-orbital tight-binding model. In the monolayer, the spin-relaxation time is found to be extremely long compared to the momentum relaxation time, and this is attributed to the fact that the spin hybridization in the band structure is suppressed by the mirror reflection symmetry. The bilayer TMD has a much shorter spin relaxat…
A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrier-phonon couplings is studied by means of a non-perturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond timescale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical exper…
We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-insulator-transition shows the longest spin relaxation time at low temperatures, a clear crossing …
Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements. Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly polarized excitation. The luminescence pump-probe showed the spin orientation of the doped electrons decay on a millisecond time-scale. Hanle measurement clarified the spin dephasing relaxation time of doped electrons is 1.7 ns which is explained by the frozen fluctuation of nuclear spins.
The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have demonstrated that the relaxation-time approximation can be used to describe the damping effects in weakly interacting multiband systems only if local charge conservation in the system and gauge invariance of the response theory are properly treated. Such a gauge-invariant response theory is illustrated on the common tight-binding model for conduction electrons in …
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin r…
The spin dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent experimental results\cite{Le-Gall_PRL_2009,Goryca_PRL_2009,Le-Gall_PRB_2010}show that it is possible to induce Mn spin polarization by means of circularly polarized optical pumping. Pumping is made possible by the faster Mn spin relaxation in the presence of the exciton. Here we discuss different Mn spin relaxation mechanisms. First, Mn-phonon coupling, which is enhanced in the presence of the exciton. Second, phonon-induced hole spin relaxation combined with carrier-Mn spin flip couplin…
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary degeneracy of the 2D electron gas. The comparison between theory and experiment shows that, in high-mobility n-doped QWs, the studied spin decoherence is controlled by electron-electron collisions.
High-quality rare-earth-ion (REI) doped materials are a prerequisite for many applications such as quantum memories, ultra-high-resolution optical spectrum analyzers and information processing. Compared to bulk materials, REI doped powders offer low-cost fabrication and a greater range of accessible material systems. Here we show that crystal properties, such as nuclear spin lifetime, are strongly affected by mechanical treatment, and that spectral hole burning can serve as a sensitive method to characterize the quality of REI doped powders. We focus on the specific case of thulium doped Y$_2$…
We investigate the low-field relaxation of nuclear hyperpolarization in undoped and highly doped silicon microparticles at room temperature following removal from high field. For nominally undoped particles, two relaxation time scales are identified for ambient fields above 0.2 mT. The slower, T_1s, is roughly independent of ambient field; the faster, T_1f, decreases with increasing ambient field. A model in which nuclear spin relaxation occurs at the particle surface via a two-electron mechanism is shown to be in good agreement with the experimental data, particularly the field-independence o…
Electronic transport properties in armchair shaped edges graphene nanoribbons (AGNRs) doped various impurities have been simulated by the non-equilibrium Green's function approach combined with the first principle calculation based on the density functional theory. We have observed that impurity levels appear in electronic struc-tures, and that the quantization of transmission function is moderated for doped AGNRs. The I-V characteristic can be computed from the transmission function. Our simulation results show that AGNRs doped impurities have higher conductance than the non-doped one.
Nano engineered spin degree of freedom in carbon system may offer desired exchange coupling with optimum spin orbit interaction which is essential, to construct solid state qubits, for fault tolerant quantum computation. The purpose of this communication is to analyze spin dynamics of, basically, four types of systems, (i) Graphene (system with inversion symmetry), (ii) Graphene like nanocarbons (GNCs, broken inversion symmetry and heterostructure, sp2 and sp3, environment), and (iii) their nitrogen doped derivatives. The spin transport data was obtained using the electron spin resonance spect…
We study the origin of the step-like shoulder on the high energy side of the low temperature photoluminescence spectrum of heavily $p$-doped GaAs. We show experimentally that it is controlled by the Fermi-Dirac distribution of the holes and by the energy distribution of the photoexcited electrons showing a sharp step-like dependence. This step is attributed to the percolation threshold in the conduction band separating localized from delocalized electron states. A comprehensive set of optical techniques based on spin orientation of electrons, namely the Hanle effect, time- and polarization-res…
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm2/Vs in highly-doped structures and 2800 cm2/Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-d…
We observe an inversion of the low temperature dependence for the conductivity of doped GaAs by application of a magnetic field. This inversion happens when Wct = 1, as predicted by Houghton (PRB25, 2196, 1982) for the correction to conductivity due to screened Coulomb repulsion in the diffusive regime. This correction follows the oscillating behavior of the transport elastic time entering the Shubnikov-de Haas regime. For Wct > 1, we observe that the Hartree part of the interaction correction is suppressed. Moreover, the total correction seems strongly reduced although its dependence stays lo…
We report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF$_3$ gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing the doping level. Both effects can be ascribed to the electron-electron correlation, which on the one hand reduces the electron-phonon coupling strength, and on the other hand affects the probability of the double resonant Raman process.
We discuss the dynamical polarization, plasmon dispersion, relaxation time, and the Friedel oscillation of screened potential of the two-dimension Dirac and three-dimension Weyl system (which are gapped) in the low-energy tigh-binding model. The results, like the Fermi wavevector, Thomas-Fermi wavevector, and longitudinal conductivity are obtained in different dimensions. Some important conclusions are detailedly discussed in this paper, including the screening character under short or long range Coulomb interaction, and the longitudinal conductivity in two- or three-dimensions. The longitudin…
Adsorption of molecular oxygen on B-, N-, Al-, Si-, P-, Cr- and Mn-doped graphene is theoretically studied using density functional theory in order to clarify if O2 can change the possibility of using doped graphene for gas sensors, electronic and spintronic devices. O2 is physisorbed on B-, and Ndoped graphene with small adsorption energy and long distance from the graphene plane, indicating the oxidation will not happen; chemisorption is observed on Al-, Si-, P-, Cr- and Mn-doped graphene. The local curvature caused by the large bond length of X-C (X represents the dopants) relative to CC bo…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we study the electron-spin relaxation dynamics without explicit excitation. The observed temperature dependence indicates the presence of localized states, which have an increased interaction with the surrounding nuclear spins. Time-resolved spin-noise spectroscopy is then applied to study the relaxation dynamics of the optically pumped nuclear-spin system. It …
We analyze the effect of electron-phonon coupling on photoemission properties and ultrafast response of doped monolayer MoS2. The analysis is based on combined DFT and many-body (Eliashberg theory) approaches. In particular, we have calculated the electronic and phonon spectra, the electron-phonon coupling and the electronic spectral function of the system at different values of doping. We have also analyzed the emissive properties and the response of the system to femtosecond (fs) laser pulses. It is shown that position of the emission peak of undoped system is in agreement with the experimen…
A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g., dopant ions and unintentional background impurities). The theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$) and the doped extrinsic ("low-temperature", $T \ll T_F$) limit with analytical scaling properties for the carrier conductivity obtained in both regimes, where $T_F$ is the Fermi temperature corresponding to the doped free carr…
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic…
The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal spin relaxation time, $T_1$, in a wide range of magnetic fields, temperatures, and pump densities. The $T_1$ time of the donor-bound electron spin of about 1.6 $μ$s remains nearly constant for external magnetic fields varied from zero up to 2.5 T (Faraday geometry) and in a temperature range $1.8-45$ K. The inhomogeneous spin dephasing time, $T_2^*=8-33$ ns, i…
Hot electrons play a crucial role in enhancing the efficiency of photon-to-current conversion or photocatalytic reactions. In semiconductor nanocrystals, energetic hot electrons capable of photoemission can be generated via the upconversion process involving the dopant-originated intermediate state, currently known only in Mn-doped cadmium chalcogenide quantum dots. Here, we report that Mn-doped CsPbBr3 nanocrystals are an excellent platform for generating hot electrons via upconversion that can benefit from various desirable exciton properties and the structural diversity of metal halide pero…
We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exist over the liquid helium temperature when $n_{2D}>2.6 \times10^{14}$ cm$^{-2}$. The maximum critical temperature is predicted to be higher than 10 K. The superconductivity of phosphorene will signific…
