三硫化钽中电压诱导扭转应变的滞后动力学
Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide
摘要：
我们已经研究了如何滞后电压诱导扭转应变，与电荷密度波脱钉，在正交三硫化钽取决于不同频率和振幅的方波和三角波电压。应变的测量方法是将样品放入一个射频腔中，并测量腔的调制响应，样品中心粘有一根导线作为传感器。从三角波，我们映射出的磁滞回线的时间依赖性，并发现磁滞回线加宽的周期小于30秒的波。方波响应表明，对正电压和负电压的动态响应可能完全不同。总的频率依赖性是弛豫的，但具有多个弛豫时间，其通常随着电压的增加而减小。详细的动态响应是非常样品依赖性，这表明它取决于详细的CDW与样品缺陷的相互作用。
英文摘要：
We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 seconds. The square-wave response shows that the dynamic response to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
