吸附诱导Pb台面在邻近Si（111）上的量子结构
Adsorbate-induced Restructuring of Pb mesas Grown on Vicinal Si(111) in the Quantum Regime
摘要：
使用扫描隧道显微镜和光谱学，我们证明，微量的Cs吸附在量子制度中生长的Pb台面上可以引起台面的急剧形态变化，其特征在于在台面顶部出现人口众多的单原子层高的Pb纳米岛。Pb纳米岛的边缘用Cs吸附原子装饰，并且纳米岛优先在台面的量子力学不稳定区域上成核和生长。密度泛函理论中的第一性原理计算表明，当Cs原子合金化到Pb台面的顶层时，形成这些纳米岛的Pb原子被吸附的Cs原子通过动力学可及的位置交换过程排出。
英文摘要：
Using scanning tunneling microscopy and spectroscopy, we demonstrate that the adsorption of a minute amount of Cs on a Pb mesa grown in the quantum regime can induce dramatic morphological changes of the mesa, characterized by the appearance of populous monatomic-layer-high Pb nano-islands on top of the mesa. The edges of the Pb nano-islands are decorated with Cs adatoms, and the nano-islands preferentially nucleate and grow on the quantum mechanically unstable regions of the mesa. Furthermore, first-principles calculations within density functional theory show that the Pb atoms forming these nano-islands were expelled by the adsorbed Cs atoms via a kinetically accessible place exchange process when the Cs atoms alloyed into the top layer of the Pb mesa.
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