硅表面的悬键电荷量子比特
Dangling-bond charge qubit on a silicon surface
摘要：
位于硅表面上的两个紧密间隔的悬挂键共享一个多余的电子被揭示为电荷量子比特的强有力的候选者。基于我们对该量子比特相干动力学的研究，其极高的隧穿速率~ 10^14 1/s，大大超过了硅基系统的预期退相干速率，从而克服了电荷量子比特量子计算的关键障碍。我们研究了用于量子计算器件的悬挂键量子比特的可能构型。悬挂键的相干动力学的一阶分析表明，在这方面的承诺。
英文摘要：
Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
