（Ga，Mn）As/GaAs周期线位移场的选择性相干X射线衍射成像
Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires
摘要：
相干X射线衍射成像扩展到晶体纳米结构器件的高分辨率应变分析。通过对（Ga，Mn）As/GaAs纳米线中应变分布的测定，证明了该方法的应用潜力。通过在倒易空间中分离衍射信号，可以通过我们的反演过程独立地重建器件的各个部分。我们证明该方法对于高度集成器件中特定材料的应变分布重建是有效的。
英文摘要：
Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices.
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