Based on the assumption that the contact barrier height determines the current flow in organic semiconductor-based electronic devices, charge injection at metal-organic (MO) interfaces has been extensively investigated, while space-charge conduction in organic bulk is generally overlooked. Recent theoretical modeling and simulation have pointed out that such a simplification is questionable due to the hopping nature of charge injection and hopping-related space-charge conduction. Here we show experimentally that charge transport in metal-organic diodes is complex interplay between injection-limited current (ILC) and space-charge-limited current (SCLC). We report the experimental observation of ILC-to-SCLC transition in Ag/pentacene/Ag diodes as a function of temperature.
Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a …
Very thin (1.2-2.5nm) self-assembled organic dielectric monolayers have been integrated into organic thin-film diode to achieve electrical characteristics. These dielectrics are fabricated by self-assembling deposition, resulting in smooth, strongly adherent, thermally stable, organosiloxane thin films having interesting electrical capacitances (around 150 nF cm-2 at -3V) and insulating properties (leakage current densities around 10-5 A cm2 at -1V).
Electrically Detected Magnetic Resonance (EDMR) was used to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline. These devices were designed to identify the micoscopic origin of different spin dependent process, i.e. hopping and exciton formation. EDMR is demonstrated to probe molecular orbitals of charge, and thus indirectly explore interfaces, exciton formation, charge accumalation and electric fields in operating organic based devices.
The application of solution-processable graphene oxide (GO) as hole injection layer in organic light-emitting diodes (OLEDs) is demonstrated. High luminance of over 53,000 cd m-2 is obtained at only 10 V. The results will unlock a route of applying GO in flexible OLEDs and other electrode applications.
A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.
We report high luminance organic light-emitting diodes by use of acid functionalized multi-walled carbon nanotube (o-MWCNTs) as efficient hole injector electrodes with a simple and solution processable device structure. At only 10 V, the luminance can reach nearly 50,000 cd/m2 with an external quantum efficiency over 2% and a current efficiency greater than 21 cd/A. The investigation of hole-only devices shows that the mechanism for hole injection is changed from injection limited to bulk limited because of the higher effective work function of the anode modified by the o-MWCNTs. We expect the…
Electroluminescence in organic light emitting diode (OLED) materials occurs via the recombination of excitonic electrons-hole pairs Only the singlet excitons of commonly used OLED materials, e.g., Aluminum trihydroxyquinoline (AlQ$_3$), decay radiatively, limiting the external quantum efficiency to a maximum 25%. Thus 75% of the energy is lost due to the triplet bottleneck for radiative recombination. We consider molecules derived from AlQ$_3$ which bypass the triplet bottleneck by designing structures which contain strong spin-orbit coupling. As a first stage of this work, groundstate energie…
The recombination of charges is an important process in organic photonic devices because the process influences the device characteristics such as the driving voltage, efficiency and lifetime. By combining the dipole trap theory with the drift-diffusion model, we report that the stationary dipole moment (μ0) of the dopant is a major factor determining the recombination mechanism in the dye-doped organic light emitting diodes when the trap depth (ΔEt) is larger than 0.3 eV where any de-trapping effect becomes negligible. Dopants with large μ0 (e.g., homoleptic Ir(III) dyes) induce large charge …
We investigate the charge-transfer interfaces between metal and redox arylamine molecular films through studying the current-voltage characteristics of single-layer organic diodes with the aid of anode interfacial engineering method. The diode turn-on voltage is shown to be highly sensitive to the arylamine/metal charge-transfer interfaces and thus can serve as a probe in detecting such organic/metal interfaces. We show that the diode electrical performance could be tuned through engineering the arylamine/metal interfaces via controlling the factors of anode work function, arylamine substitute…
The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three sets of dye molecules, such as derivatives of naphthalimide and stilbene, were used as dopants in light-emission layer. Although the devices show almost the same EL spectra for each set of molecules, they show very different EL efficiency. The difference in EL efficiency was attributed to the difference in charge carrier recombination, as revealed by transient EL. The recombination coefficient (γ) was determined from…
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system …
This work reports our effort on understanding the efficiency roll-off in blue phosphorescent organic light-emitting diodes (OLEDs), based on a blue phosphorescence from bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)- iridium (FIrpic) doped in 4,4-N,N-dicarbazole-biphenyl (CBP) host. The performance of a set of blue phosphorescent OLEDs with different FIrpic dopant concentrations was analyzed. Phosphorescent OLEDs, having a 30 nm thick pure FIrpic emissive layer, with a high luminous efficiency of 7.76 cd/A at 100 mA/cm2 was obtained. Theoretical calculation, based on the density funct…
The present work is focused on theoretical and experimental study of localised levels in organic materials suitable for light-emitting devices and field effect transistors by means of thermal techniques. In our work we focused on low molecular compounds as well as on polymers, especially of two classes of materials: oxadiazoles and quinoxalines. Both organic compounds are well know as electron transport materials in OLEDs.
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of…
We use spectrally-resolved magneto-electroluminescence (EL) measurements to study the energy dependence of hyperfine interactions between polaron and nuclear spins in organic LEDs. Using layered devices based on Bphen/MTDATA -- a well-known exciplex emitter -- we show that the increase in EL emission intensity $I$ due to small applied magnetic fields of order 100 mT is markedly larger at the high-energy blue end of the EL spectrum (dI/I ~11%) than at the low-energy red end (~4%). Concurrently, the widths of the magneto-EL curves increase monotonically from blue to red, revealing an increasing …
Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers. Here, we compare the detection efficiency of (Al,Ga)As spin-LEDs fitted with a (Zn,Be,Mn)Se spin injector in top- and side-emission configuration. In contrast with top emission, we cannot detect the electrical spin injection in side emission from analysing the degree of circular polarization of the electroluminescence. To reduce resonant optical pumping of quan…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the "droop current" - t…
The fabrication of single-carrier organic diodes from a series of sixteen molecular materials is reported. We experimentally demonstrate how the molecular structure affects the film morphology, and how the film morphology influences the diode performance. The compounds, with moderate molecular size and dendritic structures, are shown to be more favorable for good device performance than those small molecules with symmetry structures. The device turn-on voltage is found to be strongly dependent on the molecular first oxidation potentials. Independent of different anode materials, no obvious int…
We report the successful extraction of spin polarized current from the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x (x~2, TCNE: tetracyanoethylene; TC ~ 400 K, EG ~ 0.5 eV, s ~ 10-2 S/cm) and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). The spin current tracks the magnetization of V[TCNE]x~2, is weakly temperature dependent, and exhibits heavy hole / light hole asymmetry. This result has implications for room temperature spintronics and the use of inorganic materials to probe spin physics in organic and molecular systems.
Ferromagnetic metal-organic semiconductor (FM-OSC) hybrid interfaces have shown to play an important role for spin injection in organic spintronics. Here, 11,11,12,12-tetracyanonaptho-2,6-quinodimethane (TNAP) is introduced as an interfacial layer in Co-OSCs heterojunction with an aim to tune the spin injection. The Co/TNAP interface is investigated by use of X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS), near edge X-ray absorption fine structure (NEXAFS) and X-ray magnetic circular dichroism (XMCD). Hybrid interface states (HIS) are observed at Co/TNAP interface resulting from ch…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measured in a MBE grown tunnel junction on GaN PN junction device, indicating that the tunnel junction LED de…
Quantifying the spin-spin interactions which influence electronic transitions in organic semiconductors is crucial for understanding their magneto-optoelectronic properties. By combining a theoretical model for three spin interactions in the coherent regime with pulsed electrically detected magnetic resonance experiments on MEH-PPV diodes, we quantify the spin-coupling within complexes comprising three spin-half particles. We determine that these particles form triplet-exciton:polaron pairs, where the polaron:exciton exchange is over 5 orders of magnitude weaker (less than 170 MHz) than that w…
we investigated the magneto-electroluminescence (MEL) in tri-(8-hydroxyquinoline)-aluminum based organic light-emitting diodes (OLEDs) through the steady-state and transient method simultaneously. The MELs show the great different behaviors when we turn the driving condition from a constant voltage to a pulse voltage. For devices driven by the constant voltage, the MELs are similar with the literature data; for devices driven by the pulse voltage, the MELs are quite different, they firstly increase to a maximum then decrease as the magnetic field increases continuously. Negative MELs can be se…
We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated A…
p-Conjugated materials, including small molecules and polymers, are attracting substantial attention as novel gain media in semiconductor lasers; they offer many potential advantages not achievable with conventional inorganic semiconductors: simple processing, low cost, easy tuneability of the spectrum, and large-area integration on flexible substrates. Optically pumped lasing action in various small molecular and polymeric p-conjugated materials has been demonstrated using several resonator configurations. However, electrically pumped organic semiconductor lasers, i.e., organic injection or d…
Concentration quenching is a major impediment to efficient organic light-emitting devices. We herein report on Organic Light-Emitting Diodes (OLEDs) based on a fluorescent amorphous red-emitting starbust triarylamine molecule (4-di(4'-tert-butylbiphenyl-4-yl)amino-4'-dicyanovinylbenzene, named FVIN), exhibiting a very small sensitivity to concentration quenching. OLEDs are fabricated with various doping levels of FVIN into Alq3, and show a remarkably stable external quantum efficiency of 1.5% for doping rates ranging from 5% up to 40%, which strongly relaxes the technological constraints on th…
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they e…
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.
We develop a general theory of electron--hole recombination in organic light emitting diodes that leads to formation of emissive singlet excitons and nonemissive triplet excitons. We briefly review other existing theories and show how our approach is substantively different from these theories. Using an exact time-dependent approach to the interchain/intermolecular charge-transfer within a long-range interacting model we find that, (i) the relative yield of the singlet exciton in polymers is considerably larger than the 25% predicted from statistical considerations, (ii) the singlet exciton yi…
We report the study of magnetotransport properties of regio-regular poly (3-hexyl thiophene) based organic diodes. The devices were fabricated using two different techniques of spin coating and inkjet printing. Positive magnetoresistance (MR) effect was observed at room temperature in all the devices. The highest MR magnitude reached up to 16% for some spin-coated devices and up to 10% in inkjet printed devices. The MR magnitude and line shapes were found to depend strongly on the measuring current. We observed deviation from the theoretically predicted Lorentzian or non-Lorentzian line shape …
White organic light-emitting diodes (OLEDs) are ultra-thin, large-area light sources made from organic semiconductor materials. Over the last decades, much research has been spent on finding the suitable materials to realize highly efficient monochrome and white OLEDs. With their high efficiency, color-tunability, and color-quality, white OLEDs are emerging to become one of the next generation light sources. In this review, we discuss the physics of a variety of device concepts that are introduced to realize white OLEDs based on both polymer and small molecule organic materi als. Owing to the …
Organic light-emitting diodes (OLEDs) must be engineered to circumvent the efficiency limit imposed by the 3:1 ratio of triplet to singlet exciton formation following electron-hole capture. Here we show the spin nature of luminescent radicals such as TTM-3PCz allows direct energy harvesting from both singlet and triplet excitons through energy transfer, with subsequent rapid and efficient light emission from the doublet excitons. This is demonstrated with a model Thermally-Activated Delayed Fluorescence (TADF) organic semiconductor, 4CzIPN, where reverse intersystem crossing from triplets is c…
Devices which exploit the quantum properties of materials are widespread, with quantum information processors and quantum sensors showing significant progress. Organic devices offer interesting opportunities for quantum technologies owing to their engineerable spin properties, with spintronic operation and spin resonance magnetic-field sensing demonstrated in research grade devices, as well as proven compatibility with large scale fabrication techniques. Yet several important challenges remain as we move toward scaling these proof-of-principle quantum devices to larger integrated logic systems…
The use of a thin mixed layer consisting of an inert diluent material and a light emitting material between the hole-transport layer and electron-transport layer of organic light-emitting diodes leads to an increase in the external quantum efficiency. The efficiency improvement is highly dependent on the thickness of the diluted light-emitting layer and driving current. Significant improvement seen at low current densities is explained in terms of effective hole confinement by the mixed layer while a modest decreases in efficiency at higher current densities may be attributed to luminescence q…
Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through th…
The silver-p-phenylene (Ag-PPP) interface is investigated using ballistic electron emission microscopy (BEEM). Multiple injection barriers and spatial nonuniformity of carrier injection over nanometer length scales are observed. No unique injection barrier is found. Physical reasons for these features are discussed. BEEM current images and the surface topography of the silver film are uncorrelated.
Singlet-polaron and triplet-polaron annihilation mechanisms are the most detrimental exciton quenching processes that lower the efficiency of organic light-emitting diodes (OLEDs) at high current densities, causing so-called efficiency roll-off in these devices. These exciton loss mechanisms are also the critical obstacles towards the realization of electrically pumped organic semiconductor lasers, which require very high current densities to reach threshold. Herein, under a relatively large external magnetic field, we demonstrate that the efficiency roll-off at high current densities in europ…
The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends…
We present an exciton/lattice model of the electronic dynamics of primary photoexcitations in a polymeric semiconductor heterojunction which includes both polymer pi-stacking, energetic disorder, and phonon relaxation. Results from our model are consistent with a wide range of recent experimental evidence that excitons decay directly to well-defined polarons on a sub-100 fs timescale, which is substantially faster than exciton relaxation processes. Averaging over multiple samples, we find that as the interfacial offset is increased, a substantial fraction of the density of electronic states in…
As an attempt to further elucidate the operating voltage increase in InGaN-based light-emitting diodes (LEDs), the radiative and nonradiative current components are separately analyzed in combination with the Shockley diode equation. Through the analyses, we have shown that the increase in operating voltage is caused by phase space filling effect in high injection. We have also shown that the classical Shockley diode equation is insufficient to comprehensively explain the I-V curve of the LED devices since the transport and recombination characteristics of respective current components are bas…
Using d. functional theory (DFT) computations, the authors demonstrated a substantial skeletal relaxation when the structure of 2,5-bis-[4-anthracene-9-yl-phenyl]-1,1-dimethyl-3,4-diphenyl-silole (BAS) is optimized in the gas-phase comparing with the mol. structure detd. from monocrystal x-ray diffraction. The origin of such a relaxation is explained by a strong environmental strains induced by the presence of anthracene entities. Also, the estn. of the frontier orbital levels showed that this structural relaxation affects mainly the LUMO that is lowered of 190 meV in the gas phase. To check i…
Carbene-metal-amide type photoemitters based on CF$_3$-substituted carbazolate ligands show sky-blue to deep-blue photoluminescence from charge-transfer excited states. They are suitable for incorporation into organic light-emitting diodes (OLEDs) by thermal vapour deposition techniques, either embedded within a high-triplet-energy host, or used host-free. We report high-efficiency OLEDs with emission ranging from yellow to blue (Commission Internationale de l'Éclairage (CIE) coordinates from [0.35, 0.53] to [0.17, 0.17]). The latter show a peak electroluminescence external quantum efficiency …
Spin-current injection into an organic semiconductor $\rm{κ\text{-}(BEDT\text{-}TTF)_2Cu[N(CN)_2]Br}$ film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the $\rm{κ\text{-}(BEDT\text{-}TTF)_2Cu[N(CN)_2]Br}$ film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in $\rm{κ\text{-}(BEDT\text{-}TTF)_2Cu[N(CN)_2]Br}$. We found that the voltage signal in the $\rm{κ\text{-}(…
We implement and demonstrate a scheme that permits to drive electroluminescence with an extremely low turn-on voltage. The device behaves like compound semiconductors, in which the electroluminescence turn-on voltage is about the same as the open circuit voltage for the photovoltaic effect. However, the electroluminescence turn-on voltage is about half of the band gap of the emitting material, that cannot be explained using current models of charge injection in organic semiconductors. We hereby propose explanation through an Auger-type two-step injection mechanism (Auger-fountain).
Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are pivotal because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). To explore the underlying process, we apply a spin-resonance spectral hole-burning technique to probe electroluminescence. We find that the triplet exciplex states in OLEDs are highly spin-polarized and show that these states can be decoupled from the heterogeneous nuclear environment as a source of spin dephasing and can even b…
Novel thermally activated delayed fluorescence (TADF) material with diphenyl sulfone (DPS) as an electron acceptor and 3,6-dimethoxycarbazole (DMOC) and 1,3,6,8-Tetramethyl-9H-carbazole (TMC) as electron donors were investigated theoretically for a blue organic light emitting diode (OLED) emitter. We calculate the energies of the first singlet (S1) and first triplet (T1)-excited states of TADF materials by performing density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations on the ground state using a dependence on charge transfer amounts for the optimal Hartree-Fock percent…
2D hybrid organic-inorganic semiconductors (HOIS) are low-cost, self-assembled semiconductors that have proven to be vital for novel optoelectronic devices due to their inherent stable excitons even at room temperature. 2D HOIS are chemically stable with respect to the 3D analogues, but their inherent anisotropy complicates their implementation in devices, including electroluminescence (EL) devices. We report on the synthesis, characterization, cathodoluminescence and EL of a new 2D HOIS, (4-fluoro phenethylamine-H)2PbBr4, and its defect variations (DVs). The latter, in contrast to the pristin…
Despite widespread interest, ultrathin and highly flexible light-emitting devices that can be seamlessly integrated and used for flexible displays, wearables, and as bioimplants remain elusive. Organic light-emitting diodes (OLEDs) with $μ$m-scale thickness and exceptional flexibility have been demonstrated but show insufficient stability in air and moist environments due to a lack of suitable encapsulation barriers. Here, we demonstrate an efficient and stable OLED with a total thickness of $\approx$12 $μ$m that can be fully immersed in water or cell nutrient media for weeks without suffering…
We fabricate OLEDs using a stable neutral π radical, BDPA, as the emitter. There is only one electron in the singly occupied molecular orbital (SOMO) of this open-shell molecule. This feature makes the excited state of open-shell molecules be neither singlet nor triplet, but doublet. The key issue of how to harvest the triplet energy in an OLED is thus bypassed, due to the radiative decay of doublet is totally spin allowed. In the BDPA-based OLED, the emission was confirmed to be from the electronic transition from LUMO to SOMO, via the frontier molecular orbital analysis combined with the spe…
The performance of solution-processed organic light emitting diodes (OLEDs) is often limited by non-uniform contacts. In this work, we introduce Ni-containing solution-processed metal oxide (MO) interfacial layers inserted between indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) to improve the bottom electrode contact for OLEDs using the poly(p-phenylene vinylene) (PPV) derivative Super-Yellow (SY) as an emission layer. For ITO/Ni-containing MO/PEDOT:PSS bottom electrode structures we show enhanced wetting properties that result in an improved OLE…
We present a comprehensive model to analyze, quantitatively, and predict the process of degradation of organic light-emitting diodes (OLEDs) considering all possible degradation mechanisms, i.e., polaron, exciton, exciton-polaron interactions, exciton-exciton interactions, and a newly proposed impurity effect. The loss of efficiency during degradation is presented as a function of quencher density, the density and generation mechanisms of which were extracted using a voltage rise model. The comprehensive model was applied to stable blue phosphorescent OLEDs (PhOLEDs), and the results showed th…
The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction…
