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arXiv 0909.3358cond-mat.supr-con
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Tl-2201的微观掺杂机理

Possible Microscopic Doping Mechanism in Tl-2201

D. C. Peets, D. G. Hawthorn, Ruixing Liang, D. A. Bonn, W. N. Hardy

摘要:

X射线吸收光谱上的氧退火,自熔生长的单晶体的TI-2201提出了一种微观掺杂机制,其中间隙氧被吸引到铜取代的铊网站,有助于孔的平面和这些铜,通常促进只有一个孔的平面,而不是两个。这些铜取代基将提供本征空穴掺杂。这方面的证据进行了讨论,以及另一种解释。

英文摘要:

X-ray absorption spectroscopy on oxygen-annealed, self-flux-grown single crystals of Tl-2201 suggests a microscopic doping mechanism whereby interstitial oxygens are attracted to copper substituted on the thallium site, contributing holes to both the planes and to these coppers, and typically promoting only one hole to the plane rather than two. These copper substituents would provide an intrinsic hole doping. The evidence for this is discussed, along with an alternative interpretation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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