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arXiv 0909.2260cond-mat.supr-concond-mat.dis-nn
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玻色玻璃中P_2O_3的电子输运和局域化

Purely electronic transport and localization in the Bose glass

Markus Mueller

摘要:

我们讨论了输运和本地化性质的无序主导的超导体-绝缘体过渡的绝缘侧,描述的脏玻色子模型。在声子的情况下,相互作用玻色子的光谱特性分析,我们认为,玻色玻璃相承认三个不同的制度。对于最强的无序,玻色子系统在任何温度下都是完全定域的完美绝缘体。在较小的无序,只有低温相表现出完美的绝缘,而离域发生在一个有限的温度以上。我们认为,在这些完美的绝缘体和超导体之间一定存在第三相。该导电玻色玻璃相的特征在于位于基态以上的有限能量处的多体光谱中的迁移率边缘。在这种绝缘制度纯粹的电子激活的运输发生,在渐近低温下的电导率遵循阿克里先乌斯定律,而超激活的趋势预测在较高的T。这些预测与最近在高度无序的超导材料薄膜中的输运实验吻合得很好。

英文摘要:

We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.

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