真空界面对V2O3薄膜中电荷分布的影响
Influence of the vacuum interface on the charge distribution in V2O3 thin films
摘要：
采用基于密度泛函理论和局域密度近似的缀加球面波方法研究了V2 O3薄膜的电子结构。我们建立的电荷重新分布的影响，诱导的真空界面，在这样的薄膜中被限制在一个非常狭窄的表面层的约。15埃厚。因此，可以排除电荷再分布作为在100-1000埃厚度的V2 O3薄膜中观察到的金属-绝缘体转变的异常厚度依赖性的来源。
英文摘要：
The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of approx. 15 Angstroem thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness-dependence of the metal-insulator transition observed in V2O3 thin films of 100-1000 Angstroem thickness.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
