在$^{112}$ Sn中寻找$β^+$ EC和ECEC过程
Search for $β^+$EC and ECEC processes in $^{112}$Sn
摘要：
使用380 cm $^3$ HPGe检测器和由53.355 g富集锡（$^{112}$ Sn的94.32%）组成的外部源，获得了$^{112}$ Sn中$β^+$ EC（此处EC表示电子捕获）和ECEC过程的限值。90% C.L.限度已确定ECEC（0 $ν$）跃迁至$^{112}$ Cd（1871.0 keV）中$0^+_3$激发态的$4.7\times 10^{20}$ y的$^{112}$ Sn半衰期。这种过渡的情况下，讨论了一个可能的增强的衰变率由几个数量级的ECEC $(0ν)$过程中的子核素的激发态几乎退化。在未来的实验研究这样一个过程的前景进行了讨论。$^{112}$ Sn中其他$β^+$ EC和ECEC工艺的限度是在$(0.6-8.7)\times 10^{20}$ y水平上在90% C. L.下获得的。
英文摘要：
Limits on $β^+$EC (here EC denotes electron capture) and ECEC processes in $^{112}$Sn have been obtained using a 380 cm$^3$ HPGe detector and an external source consisting of 53.355 g enriched tin (94.32% of $^{112}$Sn). A limit with 90% C.L. on the $^{112}$Sn half-life of $4.7\times 10^{20}$ y for the ECEC(0$ν$) transition to the $0^+_3$ excited state in $^{112}$Cd (1871.0 keV) has been established. This transition is discussed in the context of a possible enhancement of the decay rate by several orders of magnitude given that the ECEC$(0ν)$ process is nearly degenerate with an excited state in the daughter nuclide. Prospects for investigating such a process in future experiments are discussed. The limits on other $β^+$EC and ECEC processes in $^{112}$Sn were obtained on the level of $(0.6-8.7)\times 10^{20}$ y at the 90% C.L.
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