用于超导量子线路的氮化硅量子区介电损耗的降低
Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits
摘要：
利用超导LC谐振器在30 mK和5 GHz下测量了非晶氢化氮化硅（a-SiN $_{x}$：H）的损耗，并利用独立二能级系统（TLS）缺陷模型进行了分析。每个a-SiN $_{x}$：H膜用不同浓度的氢杂质沉积。我们发现a-SiN $_{x}$：H中的量子区介电损耗角正切$\tanδ_{0}$与N-H杂质（包括NH $_{2}$）强烈相关。通过略微降低$x$，我们能够将$\tanδ_0$降低约50倍，其中最好的胶片显示$\tanδ_0$ $\simeq$ 3 $\times$ 10 $^{-5}$。
英文摘要：
The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS) defect model. Each a-SiN$_{x}$:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent $\tanδ_{0}$ in a-SiN$_{x}$:H is strongly correlated with N-H impurities, including NH$_{2}$. By slightly reducing $x$ we are able to reduce $\tanδ_0$ by approximately a factor of 50, where the best films show $\tanδ_0$ $\simeq$ 3 $\times$ 10$^{-5}$.
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