Evidence for the constancy of U in the Mott transition of V2O3
H. Fujiwara, A. Sekiyama, S. -K. Mo, J. W. Allen, J. Yamaguchi, G. Funabashi, S. Imada, P. Metcalf, A. Higashiya, M. Yabashi, K. Tamasaku, T. Ishikawa, S. Suga
We have performed high-resolution hard X-ray photoemission spectroscopy for the metal-insulator transition (MIT) system (V(1-x)Cr(x))2O3 in the paramagnetic metal, paramagnetic insulator and antiferromagentic insulator phases. The quality of the spectra enables us to conclude that the on-site Coulomb energy U does not change through the MIT, which eliminate all but one theoretical MIT scenario in this paradigm material.
For continuous Mott metal-insulator transitions in layered two dimensional systems, we demonstrate the phenomenon of dimensional decoupling: the system behaves as a three-dimensional metal in the Fermi liquid side but as a stack of decoupled two-dimensional layers in the Mott insulator. We show that the dimensional decoupling happens at the Mott quantum critical point itself. We derive the temperature dependence of the interlayer electric conductivity in various crossover regimes near such a continuous Mott transition, and discuss experimental implications.
A new mean field theory is proposed for the Mott transition in the Hubbard model based on the slave rotor representation of the electron operator. This theory provides a better description of the role of the long range charge correlation in the Mott insulating state and offers a good estimation of the critical correlation strength for the Mott transition. We have constructed a new variational wave function for the Mott insulating state based on this new slave rotor mean field theory. We find this new variational wave function outperforms the conventional Jastrow type wave function with long ra…
Gap Opening Transition and Fractal Ground State Phase Diagram in One Dimensional Fermions with Long Range Interaction : Mott Transition as a Quantum Phase Transition of Infinite Order
的电导率和热电功率的压力依赖性测量通过莫特过渡层有机导体EtMe 3 P [Pd（dmit）2]2。热电效应的临界行为提供了等温压力扫描期间Mott-Hubbard转变的清晰和客观的确定。以上的临界端点，金属-绝缘体交叉，确定的热电效应的最小值，没有被发现符合作为压力的函数的电导率的导数的最大值。我们表明，临界指数的莫特-哈伯德过渡属于伊辛普适类，无论系统的维数。
We study theoretically the quantum phase transition from a metal to a Wigner-Mott insulator at fractional commensurate filling on a two-leg ladder. We show that a continuous transition out of a symmetry-preserving Luttinger liquid metal is possible where the onset of insulating behavior is accompanied by the breaking of the lattice translation symmetry. At fillings $ν= 1/m$ per spin per unit cell, we find that the spin degrees of freedom also acquire a gap at the Wigner-Mott transition for odd integer $m$. In contrast for even integer $m$, the spin sector remains gapless and the resulting insu…
We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory, we show that the precondition for a Mott transition is an integer total filling of the two bands, while for an integer constant occupation of the correlated band the system remains a correlated metal at arbitrary large interaction strength. We picture the transition at a non-integer filling of the correlated orbital as the Mott localization of the singlet s…
The dissociation of excitons into holes and electrons in photoexcited semiconductors, despite being one of the first recognized examples of a Mott transition, still defies a complete understanding, especially regarding the character of the transition, which is first order in some cases and second order in others. Here we consider an idealized model of photoexcited semiconductors that can be mapped onto a spin-polarised half-filled Hubbard model, whose phase diagram reproduces most of the phenomenology of photoexcited semiconductors and uncovers the key role of the exciton binding energy in det…
Mott transition plays a key role in strongly correlated physics but its nature is not yet fully understood. Motivated by recent development of Schwinger boson approach for the Kondo lattice, we propose in this work a novel slave fermion algorithm to study the Mott transition. Upon local approximation, our method yields a phase diagram with a zero-temperature continuous (Mott) metal-insulator transition at finite Coulomb interaction $U$ for the half-filled one-band Hubbard model on a square lattice, and the resistivity exhibits a critical scaling around the quantum Widom line. We argue that the…
We study orbital Mott transition in two dimensional pyrochlore lattice, using a two orbital Hubbard model with only inter-orbital electronic hopping. We use a real space Monte Carlo based approach to study the model at finite temperature, and establish temperature-interaction phase diagrams that highlight the Mott transition, orbital ordering, and spectral trends, and possible window of pseudo gap. Due to only inter-orbital hopping, the Mott insulator `generates' ferro exchange resulting in ferro-orbital ordering, with T$_{corr}/t$ peaked at $\approx$ 0.2 around $U/t \approx 6$. The optical co…
We consider the interaction-driven Mott transition at zero temperature from the viewpoint of microscopic Fermi liquid theory. To this end, we derive an exact expression for the Landau parameters within the dynamical mean-field theory (DMFT) approximation to the single-band Hubbard model. At the Mott transition the symmetric and the anti-symmetric Landau parameter diverge. The vanishing compressibility at the Mott transition directly implies the divergence of the forward scattering amplitude in the charge sector, which connects the proximity of the Mott phase to a tendency towards phase separat…
Site-Selective Mott Transition in a Quasi-One-Dimensional Vanadate V6O13
利用轨道分辨51 V核磁共振谱研究了准一维体系V6 O 13的金属-绝缘体转变的微观机制。我们发现，过渡涉及一个网站选择性d轨道的顺序提升两个VO 6链中的一个的双重轨道简并。另一个链在整个过渡中在单占据的dxy轨道上留下顺磁矩。这两条链分别稳定了基态的轨道辅助自旋Peierls态和反铁磁长程序。择位Mott跃迁可能是反常金属和Mott-Peierls对偶性的一个来源。
