硅（001）表面低温生长Ge纳米团簇的电容研究
Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures
摘要：
研究了低温下生长在硅（001）表面的锗纳米团簇多层阵列的电学性质。从STM估计的量子点（QD）密度和从C-V特性提取的QD层积累的电荷之间的相关性被揭示。研究了C-V特性的温度依赖性。在低温下，观察到滞后。在具有不同QD排列的结构上测量的DLTS谱表现出本质的区别。
英文摘要：
Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
