MgB2的晶格参数、晶格无序度和电阻率及其与transition temperature的相关性
Lattice paramenter, lattice disorder and resistivity of carbohydrate doepd MgB2 and their correlation with the transition temperature
摘要：
在晶格参数或晶格无序的变化被要求作为在MgB2中的碳掺杂的转变温度的轻微降低的原因。在这项工作中，碳水化合物掺杂的影响进行了广泛的调查。结果表明，随着烧结温度的升高，不仅a轴晶格常数增大，c轴晶格常数也增大。晶胞体积与临界温度呈线性关系。与晶格应变和临界温度之间的相关性相比，X射线峰展宽本身与转变温度的相关性更密切。剩余电阻率与临界温度之间也存在线性相关关系，并对其意义进行了讨论。
英文摘要：
The change in the lattice parameters or the lattice disorder is claimed as a cause of the slight reduction in the transition temperature by carbon doping in MgB2. In this work, an extensive investigation on the effects of carbohydrate doping has been carried out. It is found that not only the a-axis but also the c-axis lattice parameter increases with the sintering temperature. A linear relation between the unit cell volume and the critical temperature is observed. Compared with the well known correlation between the lattice strain and the critical temperature, the X-ray peak broadening itself shows a closer correlation with the transition temperature. The residual resistivity and the critical temperature are linearly correlated with each other as well and its implication is further discussed.
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