分子自旋交叉配合物Fe（phen）2（NCS）2薄膜的研究
Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films
摘要：
我们报告的高品质薄膜的Fe（phen）2（NCS）2（phen= 1，10-菲咯啉），保持预期的电子结构下降到10 nm的厚度，并表现出温度驱动的自旋跃迁的高真空下蒸发生长。我们已经研究了基于这种薄膜的器件的电流-电压特性。从空间电荷限制的电流制度，我们推导出的迁移率为6.5x10-6 cm 2/V？s，这与在广泛研究的三（8-羟基喹啉）铝有机半导体上测得的短程迁移率相似。这一工作为基于自旋交叉复合物的多功能分子器件的研究奠定了基础。
英文摘要：
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V?s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.
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