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arXiv 0908.0557cond-mat.mes-hall
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(111)n型Si/SiGe量子级联激光器的理论与设计

Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

A. Valavanis, L. Lever, C. A. Evans, Z. Ikonić, R. W. Kelsall

摘要:

虽然大多数实现IV族量子级联激光器(QCL)的工作都集中在价带跃迁上,但导带有许多理想的性质。我们表明,通常提到的n型Si/SiGe异质结构的缺点,可以克服移动到(111)生长方向。具体地,大的带偏移和低的有效质量是可实现的,并且子带简并被保留。我们预测的净增益高达90 K的晶格温度在绑定到连续QCL与双金属波导,并表明,锗互扩散长度至少为8埃的接口是可以容忍的。

英文摘要:

Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 angstroms across interfaces is tolerable.

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