通过测量CuCr $_2$ Se $_4$在不同温度下的反射率和磁光克尔效应（MOKE），确定了在宽光子能量范围内的对角和非对角电导率谱。除了在$E$ $\approx$ 2 eV处的低能金属贡献和低位电荷转移跃迁外，在$E$ $=$ 0.5 eV附近的中红外区还观察到了尖锐而明显的光学跃迁，具有巨大的磁光活性.这种激发归因于奇偶允许的过渡通过硒-铬杂化诱导的间隙中的多数自旋通道。大的非对角电导率是由费米能级附近的高自旋极化和相关载流子的强自旋-轨道相互作用解释的。结合能带结构的计算结果进行了讨论。
英文摘要：
Diagonal and off-diagonal optical conductivity spectra have been determined form the measured reflectivity and magneto-optical Kerr effect (MOKE) over a broad range of photon energy in the itinerant ferromagnetic phase of CuCr$_2$Se$_4$ at various temperatures down to T=10 K. Besides the low-energy metallic contribution and the lower-lying charge transfer transition at $E$$\approx$2 eV, a sharp and distinct optical transition was observed in the mid-infrared region around $E$$=$0.5 eV with huge magneto-optical activity. This excitation is attributed to a parity allowed transition through the Se-Cr hybridization-induced gap in the majority spin channel. The large off-diagonal conductivity is explained by the high spin polarization in the vicinity of the Fermi level and the strong spin-orbit interaction for the related charge carriers. The results are discussed in connection with band structure calculations.
This study investigates the transport properties of a chiral elemental semiconductor tellurium (Te) under magnetic fields and pressure. Application of hydrostatic pressure reduces the resistivity of Te, while its temperature dependence remains semiconducting up to 4 GPa, contrary to recent theoretical and experimental studies. Application of higher pressure causes structural as well as semiconductor--metal transitions. The resulting metallic phase above 4 GPa exhibits superconductivity at 2 K along with a noticeable linear magnetoresistance effect. On the other hand, at ambient pressure, we id…
A nonlinear magnetoresistance - called unidirectional spin-Hall magnetoresistance - is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of the USMR, both ferromagnetic and heavy metallic layer thickness dependence of the USMR are presented in a Pt/Co/AlOx trilayer at room temperature. To avoid ambiguities, second harmonic Hall measurements are used for separating spin-Hall and thermal contributions to the non-linear magnetoresistance. The experimental results are fitted by using a drift-diffusion t…
Transition from a ferromagnetic insulating to a ferromagnetic metallic state in nanoparticles of Nd0.8Sr0.2MnO3 : Study of the electronic - and magneto - transport properties
A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and transverse resistivities in both nonmagnet and ferromagnet are obtained by solving the spin diffusion equation. The magnetoresistance generated from charge-spin conversion purely caused by the anomalous Hall effect in the ferromagnet is found to be proportional to the square of the spin polarizations in the ferromagnet and has fixed sign. We also find additional …
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator (FI) systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity with temperature. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively descr…
We derive a simple relational expression between the spin polarization ratio of resistivity, $P_ρ$, and the anisotropic magnetoresistance ratio $Δρ/ρ$, and that between the spin polarization ratio of the density of states at the Fermi energy, $P_{\rm DOS}$, and $Δρ/ρ$ for nearly half-metallic ferromagnets. We find that $P_ρ$ and $P_{\rm DOS}$ increase with increasing $|Δρ/ρ|$ from 0 to a maximum value. In addition, we roughly estimate $P_ρ$ and $P_{\rm DOS}$ for a Co$_2$FeGa$_{0.5}$Ge$_{0.5}$ Heusler alloy by substituting its experimentally observed $Δρ/ρ$ into the respective expressions.
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3…
Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some μV, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident…
Magnetocrystalline anisotropy is a fundamental property of magnetic materials that determines the dynamics of magnetic precession, the frequency of spin waves, the thermal stability of magnetic domains, and the efficiency of spintronic devices. We combine torque magnetometry and density functional theory calculations to determine the magnetocrystalline anisotropy of the metallic antiferromagnet Fe$_2$As. Fe$_2$As has a tetragonal crystal structure with the Néel vector lying in the (001) plane. We report that the four-fold magnetocrystalline anisotropy in the (001)-plane of Fe$_2$As is extremel…
The linear magneto-optical Kerr effect (MOKE) is often used to probe magnetism of ferromagnetic materials, but MOKE cannot be applied to collinear antiferromagnets (AFs) due to the cancellation of sub-lattice magnetization. Magneto-optical constants that are quadratic in magnetization, however, provide an approach for studying AFs on picosecond time scales. Here, we combine transient measurements of optical reflectivity and birefringence to study the linear optical response of Fe$_{2}$As to small ultrafast temperature excursions. We performed temperature dependent pump-probe measurements on cr…
We investigated the magnetization dynamics of a patterned Co$_{25}$Fe$_{75}$-based heterostructure with a novel optical measurement technique that we call microfocused frequency-resolved magneto optic Kerr effect ($μ$FR-MOKE). We measured the magnetic field dependence of the dynamical spin-wave susceptibility and recorded a spatial map of the spin-waves excited by a microwave antenna. We compare these results to those obtained on the same sample with the established microfocused Brillouin light scattering technique. With both techniques, we find a spin-wave propagation length of 5.6$μ$m at 10G…
In half-doped Pr0.50A0.50CoO3 metallic perovskites, the spin-lattice coupling brings about distinct magnetostructural transitions for A=Ca and A=Sr at temperatures close to 100 K. However, the ground magnetic properties of Pr0.50Sr0.50CoO3 (PSCO) strongly differ from Pr0.50Ca0.50CoO3 ones, where a partial Pr3+ to Pr4+ valence shift and Co spin transition makes the system insulating below the transition. This work investigates and describes the relationship between the Imma-to-I4/mcm symmetry change [Padilla-Pantoja et al, Inorg. Chem. 53, 12297 (2014)] and the original magnetic behavior of PSC…
A magnetoresistance effect induced by the Rashba spin-orbit interaction was predicted, but not yet observed, in bilayers consisting of normal metal and ferromagnetic insulator. Here, we present an experimental observation of this new type of spin-orbit magnetoresistance (SOMR) effect in a bilayer structure Cu[Pt]/Y3Fe5O12 (YIG), where the Cu/YIG interface is decorated with nanosize Pt islands. This new MR is apparently not caused by the bulk spin-orbit interaction because of the negligible spin-orbit interaction in Cu and the discontinuity of the Pt islands. This SOMR disappears when the Pt is…
We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimenta…
The deviation of positions of atoms from their ideal lattice sites in crystalline solid state systems causes distortion and can lead to variation in structural [1] and functional properties [2]. Distortion in molecular systems has been traditionally understood in the term of Jahn-Teller distortion [3], while for the one-dimensional chain of metals, the Peierls distortion mechanism has been proposed [4]. In a real three dimensional metallic systems, a fundamental description of the distortion is missing, which we need to design alloys with attractive structural properties. The present investiga…
The magneto-optical Kerr effect (MOKE) is often assumed to be proportional to the magnetisation of a magnetically ordered metallic sample; in metallic ferrimagnets with chemically distinct sublattices, such as rare-earth transition-metal alloys, it depends on the difference between the sublattice contributions. Here we show that in a highly spin polarized, fully compensated ferrimagnet, where the sublattices are chemically similar, MOKE is observed even when the net moment is strictly zero. We analyse the spectral ellipsometry and MOKE of Mn 2 Ru x Ga, and show that this behaviour is due to a …
The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of Mn$_y$Ru$_x$Ga films on MgO (100) substrates with $1.8 \leq y \leq 2.6$ and $x = 0.5$, 0.7 or 0.9, including crystallographic, magnetic order, magneto-transport and spin polarisation is undertaken to map specific composition-dependent properties in this versatile ternary system. A comparison of experimental densities obtained from X-ray reflectivity with calculated densi…
Few layers Fe$_3$GeTe$_2$ is currently the only atomically thin ferromagnetic metal, and thus has drawn huge attention in the field of two-dimensional (2D) magnetism. In this paper, we perform a systematic first principle study on the electronic structure, magnetic anisotropy energy (MAE), and magneto-optical (MO) effects in monolayer (ML), bilayer (BL) and trilayer (TL) as well as bulk Fe$_3$GeTe$_2$. All the considered structures of Fe$_3$GeTe$_2$ are predicted to have large MAE of order $\sim$3.0 meV/f.u., being larger than reported 2D ferromagnetic semiconductors Cr$_2$Ge$_2$Te$_6$ and CrI…
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is $δ$ times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter $δ$ to the spin-flip transmission and reflection probabilities at an individual interface. It is found that $δ$ is proportional to the…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed…
