用d波接触约瑟夫森结测量石墨烯内禀电子关联的可能性
The possibility of measuring intrinsic electronic correlations in graphene using a d-wave contact Josephson junction
摘要：
虽然没有得到广泛的认可，但电子相关性可能在石墨烯中发挥重要作用。事实上，鲍林的共振价键（RVB）理论的pp键合平面有机分子，其中石墨烯是无限延伸，已经建立了最近邻自旋单重键（SB）状态在这些材料中的重要性。然而，尽管最近对石墨烯的兴趣有所增长，但仍然没有定量估计未掺杂或掺杂石墨烯中库仑排斥的影响。在这里，我们使用紧束缚Bogoliubov-de Gennes（TB BdG）形式主义，以表明在非常规的d波接触石墨烯约瑟夫森结的内在SB相关性强烈增强。我们发现SB关联对邻近效应和约瑟夫森电流都有显著的影响，并建立了超导衰变长度与1/（T-T_c）的函数关系。T_c是本征SB关联的超导转变温度，它取决于库仑排斥效应和掺杂水平。因此，我们建议，d波接触石墨烯约瑟夫森结将提供一个有前途的实验系统的测量的有效强度的内在SB相关的石墨烯。
英文摘要：
While not widely recognized, electronic correlations might play an important role in graphene. Indeed, Pauling's resonance valence bond (RVB) theory for the pp-bonded planar organic molecules, of which graphene is the infinite extension, already established the importance of the nearest neighbor spin-singlet bond (SB) state in these materials. However, despite the recent growth of interest in graphene, there is still no quantitative estimate of the effects of Coulomb repulsion in either undoped or doped graphene. Here we use a tight-binding Bogoliubov-de Gennes (TB BdG) formalism to show that in unconventional d-wave contact graphene Josephson junctions the intrinsic SB correlations are strongly enhanced. We show on a striking effect of the SB correlations in both proximity effect and Josephson current as well as establishing a 1/(T-T_c) functional dependence for the superconducting decay length. Here T_c is the superconducting transition temperature for the intrinsic SB correlations, which depends on both the effects of Coulomb repulsion and the doping level. We therefore propose that d-wave contact graphene Josephson junctions will provide a promising experimental system for the measurement of the effective strength of intrinsic SB correlations in graphene.
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