We investigate charge transport in two-dimensional ferromagnet/feromagnet junction on a topological insulator. The conductance across the interface depends sensitively on the directions of the magnetizations of the two ferromagnets, showing anomalous behaviors compared with the conventional spin-valve. It is found that the conductance depends strongly on the in-plane direction of the magnetization. Moreover, in sharp contrast to the conventional magnetoresistance effect, in the p-n junction, the conductance at the parallel configuration is much smaller than that at the antiparallel configuration. This stems from the way how the wavefunctions connect between both sides.
Anomalous Hall-like signals in platinum in contact with magnetic insulators are common observations that could be explained by either proximity magnetization or spin Hall magnetoresistance. In this work, longitudinal and transverse magnetoresistances are measured in a pure gold thin film on the ferrimagnetic insulator Y$_3$Fe$_5$O$_{12}$ (Yttrium Iron Garnet, YIG). We show that both the longitudinal and transverse magnetoresistances have quantitatively consistent scaling in YIG/Au and in a YIG/Pt reference system when applying the Spin Hall magnetoresistance framework. No contribution of an an…
Intriguing novel phenomena in lead films inspire new understanding of quantum physics, such as quantum size effect and quantum phase transitions etc. The improvement of the sample quality makes it even more promising to explore the intrinsic properties in two-dimensional system. In this paper, we show that the crystalline interfacial striped incommensurate layer can increase the quality of the lead films and significantly enhance the magnitude of magnetoresistance. By performing systematic transport measurement, a predominant anomalous linear magnetoresistance is revealed, and the widely used …
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore we find: 1) magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; 2) magnetoresistance is nearly independent of …
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in t…
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe$_3$Sn$_2$, Co$_3$Sn$_2$S$_2$, and Mn$_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to c…
Transverse magnetoresistance in a ferromagnetic/nonmagnetic/ferromagnetic trilayer originated from charge-spin conversion by anomalous Hall effect is investigated theoretically. Solving the spin diffusion equation in bulk and using the spin-dependent Landauer formula at the ferromagnetic/nonmagnetic interface, an analytical formula of the transverse resistivity is obtained. The charge-spin conversion by the anomalous Hall effect contributes to the magnetoresistance in a manner proportional to the square of the spin anomalous Hall angle. The angular dependence of the magnetoresistance is basica…
We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons $n(x)$ in such a layer decays with the distance from the surface $x$ very slowly as $n(x) \propto 1/x^{12/7}$. We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large $x$ because of growing time electrons need to reach the surface. We explore truncation …
Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level d…
The theory of magnetoresistance of the edge state of a two-dimensional topological insulator is developed. The magnetic field violates the time-reversal invariance. Magnetoresistance arises due to the energy gap opened by a magnetic field parallel to the sample surface. The combined action of impurities and the magnetic field causes backscattering of edge electrons. Although impurities are necessary for scattering, sufficiently strong interaction with impurities leads to the suppression of backscattering.
Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance in the topological insulator BiSbTeSe2, at temperatures below 50 K. Our analysis shows that the negative magnetoresistance originates from an increase in the density of defect states created by introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative magnetoresistance contribution with increas…
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon - the quantum anomalous Hall effect - provides a conceptually new platform for studies of edge-state transport, distinct from the more extensively studied integer and fractional quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D…
We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work…
Linear magnetoresistance on the topological surface
一个积极的，非饱和和占主导地位的线性磁阻被证明发生在拓扑绝缘体的表面状态具有波矢线性能量色散与有限的正塞曼能量分裂。这种线性磁电阻在高载流子密度和低迁移率的空间均匀系统中在相当宽的磁场范围内表现出来，其中导电电子处于扩展状态并分布在许多模糊的朗道能级上，并且对温度升高具有鲁棒性，与最近的实验结果一致。在Bi $_2$ Se $_3$纳米带中。
Bilinear magnetoresistance is a nonlinear transport phenomenon that scales linearly with the electric and magnetic fields, and appears in nonmagnetic systems with strong spin-orbit coupling, such as topological insulators (TIs). Using the semiclassical Boltzmann theory and generalized relaxation time approximation, we consider in detail the bilinear magnetoresistance in an effective model describing surface states of three-dimensional topological insulators. We show that the presence of magnetic impurities remarkably modifies the BMR signal. In general, scattering on magnetic impurities reduce…
We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with $n$-doped F and $p$-doped N regions and also a finite conductance in the AP configuration with the N region of $n$-type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switchin…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresista…
A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and transverse resistivities in both nonmagnet and ferromagnet are obtained by solving the spin diffusion equation. The magnetoresistance generated from charge-spin conversion purely caused by the anomalous Hall effect in the ferromagnet is found to be proportional to the square of the spin polarizations in the ferromagnet and has fixed sign. We also find additional …
Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic AHE include diverging Berry curvature in Weyl semimetals, anticrossing nodal rings or points of non-trivial bands, and noncollinear spin structures. Here we show that a half-topological semimetal (HTS) state near a topological critical point can provide a new mechanism for driving an exceptionally large AHE. We reveal this through a systematic experimental …
Magnetic Weyl semimetals exhibit intriguing transport phenomena due to their non-trivial band structure. Recent experiments in bulk crystals of the shandite-type Co$_3$Sn$_2$S$_2$ have shown that this material system is a magnetic Weyl semimetal. To access the length scales relevant for chiral transport, it is mandatory to fabricate microstructures of this fascinating compound. We therefore have cut micro-ribbons (typical size $0.3~\times~3~\times~50$μ$m^3$) from Co$_3$Sn$_2$S$_2$ single crystals using a focused beam of Ga$^{2+}$-ions and investigated the impact of the sample dimensions and po…
Anomalous magnetoresistance effect in nanoengineered material
在体材料或人工设计的材料中，磁阻对外部可调参数（例如磁场或化学成分）的周期性响应已被开发用于技术应用以及推进我们对固态物理的许多新颖效应的理解。一些值得注意的例子是层状材料中的巨磁电阻效应、半导体异质结构中的量子霍尔效应和无序金属中电子波函数的相位相干性。近年来，在纳米尺度上设计材料的能力在探索新现象方面发挥了关键作用。使用一个系统，涉及周期性的Co点阵列与周围的多晶铜膜直接接触，我们报告的观察巨热滞和异常振荡的磁阻行为。振荡磁电阻的不寻常之处在于它在100 K < T < 200 K的中温范围内只沿一个场扫描方向观测。减小Cu膜的厚度减弱了磁阻振荡。这些特性表明了一种新的现象，可以用于未来的技术应用。
An intriguing phenomenon in topological semimetals and topological insulators is the negative magnetoresistance (MR) observed when a magnetic field is applied along the current direction. A prevailing understanding to the negative MR in topological semimetals is the chiral anomaly, which, however, is not well defined in topological insulators. We calculate the MR of a three-dimensional topological insulator, by using the semiclassical equations of motion, in which the Berry curvature explicitly induces an anomalous velocity and orbital moment. Our theoretical results are in quantitative agreem…
We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the oth…
The resistance of layered conductors with a multisheet Fermi surface (FS), in a high magnetic field, in the immediate vicinity of Lifshic's topological transition when the separate FS sheets are drown together by an external action, pressure in part (and eventual change of the FS connectivity) is studied theoretically. Analysis of magnetoresistance near topological transition is illustrated for the case of FS in the shape of lightly corrugated cylinder and two corrugated planes distributed with a repeated period in the pulse space. It yields, that as the FS plane sheets approach sufficiently t…
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metall…
ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillation…
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque (SOT). Concentrating on the quasiballistic limit, we also predict a giant anisotropic magnetoresistance (AMR) at low dopings. These effects, which have no counterparts in thick TIs, depend on the simultaneous presence of the hybridization between the surface states and the in-plane magnetization. Both the ISGE and AMR exhibit a strong dependence on the magn…
Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well-known Drude model due to large, non-parabolic contributions. In this work, we focus on the effects of magnetic fields on topological materials through a Zeeman term included in the model Hamiltonian. To this end, we re-evaluate the simplifications made in the derivations of the Drude model and pinpoint the scattering time and Fermi velocity as Zeeman-term dependent factors in the conductivity tensor. The driving mec…
In an ideal topological insulator, the helical spin structure of surface electrons suppresses backscattering and thus can enhance surface conductivity. We investigate the effect of perpendicular magnetic field on the spin structure of electrons at the Fermi energy and calculate a magnetic-field dependent topological enhancement factor for different disorder potentials, ranging from short-range disorder to screened Coulomb potential. Within the Boltzmann approximation, the topological enhancement factor reaches its maximum value of 4 for a short-range disorder at zero magnetic field and approac…
A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We p…
We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are performed based on a realistic tight-binding model for Bi$_{2}$Se$_{3}$. We study both three dimensional devices, which exploit the surface states of Bi$_{2}$Se$_{3}$, as well as two-dimensional devices, which exploit the edge states of thin Bi$_{2}$Se$_{3}$ strips. We demonstrate that the material properties of Bi$_{2}$Se$_{3}$ allow a TMR ratio at room temperat…
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce …
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show how these effects can be used to reliably switch perpendicularly magnetized layers and to move domain walls. A drift-diffusion treatment of the anomalous Hall effect and the anisotropic magnetoresistance describes the spin currents that flow in directions perpendicular to the electric field. In systems with two ferromagnetic layers separated by a spacer laye…
We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a lnT-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exh…
We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. An extended model including spin transport within the Co layer cannot account for the large SMR. To identify its origin, contributions from other sources are studied. For most bilayers, the SMR increases with decreasing temperature and increasing magne…
Though the Fermi surface of surface states of a 3D topological insulator (TI) has zero magnetization, an arbitrary segment of the full Fermi surface has a unique magnetic moment consistent with the type of spin-momentum locking in hand. We propose a three-terminal set up, which directly couples to the magnetization of a chosen segment of a Fermi surface hence leading to a finite tunnel magnetoresistance (TMR) response of the nonmagnetic TI surface states, when coupled to spin polarized STM probe. This multiterminal TMR not only provides a unique signature of spin-momentum locking for a pristin…
Among the potential applications of topological insulators, we investigate theoretically the effect of coexistence of proximity-induced ferromagnetism and superconductivity on the surface states of 3-dimensional topological insulator, where the superconducting electron-hole excitations can be significantly affected by the magnetization of ferromagnetic order. We find that, Majorana mode energy, as a verified feature of TI F/S structure, along the interface sensitively depends on the magnitude of magnetization $m_{zfs}$ in FS region, while its slope in perpendicular incidence presents steep and…
Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeB layer without any adjacent SHE layers, where the UMR signal is about 10 times larger than that in Ta/CoFeB structures and can be detected by usin…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and nonmagnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magne…
