Tsallis分布与发光衰减
Tsallis distribution and luminescence decays
摘要：
通常，采用Kohlrausch（拉伸指数）函数来拟合发光衰减。在这项工作中，我们建议使用Tsallis分布作为替代来描述它们。我们表明，从Tsallis分布得到的发光衰减曲线接近那些从拉伸指数得到的。进一步的，我们的结果可以很好的拟合多孔硅在低温下的数据和陷阱控制发光模型的模拟结果。
英文摘要：
Usually, the Kohlrausch (stretched exponential) function is employed to fit the luminescence decays. In this work we propose to use the Tsallis distribution as an alternative to describe them. We show that the curves of the luminescence decay obtained from the Tsallis distribution are close to those ones obtained from the stretched exponential. Further, we show that our result can fit well the data of porous silicon at low temperature and simulation result of the trapping controlled luminescence model.
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