MBE无催化剂选择性区域生长InN纳米柱
Catalyst-free selective area growth of InN nanocolumns by MBE
摘要：
采用等离子体辅助分子束外延技术选择性生长氮化铟纳米棒。发现钼在生长InN纳米柱所需的475 C的低衬底温度下是合适的掩模材料。在Si（111）衬底上生长单个纳米棒阵列已经用光刻图案化的具有小于60 nm的孔的薄钼掩模实现。
英文摘要：
Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The growth of arrays of single nanorods on a Si(111) substrate has been achieved with a thin molybdenum mask lithographically patterned with holes smaller than 60 nm.
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