获得某些半导体结构中陡非线性伏安特性的新可能
New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures
摘要：
本文研究了在肖特基势垒的耗尽区建立共振隧穿结构的半导体系统中的电子过程。结果表明，肖特基势垒能有效地阻断或解除共振隧穿电流的阻断。隧道过程确实揭示了连贯性。在正向和反向支路上都观察到尖锐的非线性电流-电压特性。
英文摘要：
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
