含左手材料的一维光子晶体带交叉结构附近Goos-Hänchen位移的可逆性
The reversibility of the Goos-Hänchen shift near the band-crossing structure of one-dimemsional photonic crystals containing left-handed metamaterials
摘要：
对含有左手材料的一维光子晶体中的古斯-哈兴位移进行了理论研究。我们发现在光子带交叉结构附近存在一种特殊的GH位移效应，在斜入射下，它位于条件$% -k_{z}^{(A)}d_{A}=k_{z}^{(B)}d_{B}=mπ$ $(m=1,2,3...)$下，这里A表示LHM层，B表示介质层。在带交叉点（BCP）频率以上，随着入射角的增加，GH位移由负向正变化，而在BCP频率以下，GH位移变化不大。这种效应是解释的带交叉结构的相位特性。
英文摘要：
We perform a theoretical investigation on the Goos-Hächen (GH) shift in one-dimensional photonic crystals (1DPCs) containing left-handed metamaterials (LHMs). We find an unusal effect of the GH shift near the photonic band-crossing structure, which is located at the condition, $% -k_{z}^{(A)}d_{A}=k_{z}^{(B)}d_{B}=mπ$ $(m=1,2,3...)$, under the inclined incident angle, here A denotes the LHM layer and B denotes the dielectric layer. Above the frequency of the band-crossing point (BCP), the GH shift changes from negative to positive as the incident angle increases, while the GH shift changes reversely below the BCP frequency. This effect is explained in terms of the phase property of the band-crossing structure.
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