晶体硅与二氧化硅界面缺陷附近磷施主电子的$T_1$ -和$T_2$ -自旋弛豫时间限制
$T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
摘要：
含磷施主电子自旋和自旋相关电子跃迁的研究（111）取向的结晶硅（c-Si）附近的（$^{31}$ P）原子与二氧化硅接触在液态$^4$ He温度（$T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$）下，给出了[ $^{31}$ P]= 10 $^{15}$ $\mathrm{cm}^{-3}$和[ $^{31}$ P] = 10 $^{16}$ $\mathrm{cm}^{-3}$的（SiO $_{2}$）界面.使用脉冲电检测磁共振（pEDMR），观察到的\Phos供体状态和两个可区分的界面状态之间的自旋相关的过渡，即（i）\Pb中心，可以通过其特征各向异性和（ii）一个更各向同性的中心，这是由于E $^\prime$缺陷的\sio散装接近的接口。自旋相关复合的动力学的相关测量证实，先前提出的\Phos和界面缺陷之间的过渡发生。这些电子近界面跃迁对\Phos施主自旋相干时间$T_2$以及施主自旋-晶格弛豫时间$T_1$的影响，然后通过比较从常规的体敏脉冲电子顺磁共振和表面敏感的pEDMR，以及表面敏感的电检测反转恢复实验获得的自旋哈恩回波衰减测量。测量结果表明，$T_2$和$T_1$的\Phos施主电子自旋附近的能量较低的界面态在$T\leq 13$ K减少了几个数量级。
英文摘要：
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] = 10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$). Using pulsed electrically detected magnetic resonance (pEDMR), spin--dependent transitions between the \Phos donor state and two distinguishable interface states are observed, namely (i) \Pb centers which can be identified by their characteristic anisotropy and (ii) a more isotropic center which is attributed to E$^\prime$ defects of the \sio bulk close to the interface. Correlation measurements of the dynamics of spin--dependent recombination confirm that previously proposed transitions between \Phos and the interface defects take place. The influence of these electronic near--interface transitions on the \Phos donor spin coherence time $T_2$ as well as the donor spin--lattice relaxation time $T_1$ is then investigated by comparison of spin Hahn--echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that both $T_2$ and $T_1$ of \Phos donor electrons spins in proximity of energetically lower interface states at $T\leq 13$ K are reduced by several orders of magnitude.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
