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arXiv 0904.4446cond-mat.mes-hallcond-mat.mtrl-sci
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双层石墨烯在高偏压下的散粒噪声和电导率:电子-光学声子耦合的特征

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

A. Fay, R. Danneau, J. K. Viljas, F. Wu, M. Y. Tomi, J. Wengler, M. Wiesner, P. J. Hakonen

摘要:

研究了双层石墨烯(BLG)片在高偏压和低浴温$T_0=4.2$ K下的电子电导率和散粒噪声。作为偏置的函数,我们发现最初增加的微分电导率,我们归因于自加热。在较高的偏压下,由于光学声子的背散射,电导率饱和甚至下降。电子-声子相互作用也负责在偏置电压$V>0.1$ V的Fano因子的衰减。高偏置电子温度已从散粒噪声测量计算,它上升到$\sim1200$ K在$V=0.75$ V。使用BLG电导率的理论温度依赖性,我们提取一个有效的电子-光学声子散射时间$τ_{e-op}$。在230 nm长的迁移率为$μ=3600$ cm $^2$ V $^{-1}$ s $^{-1}$的BLG样品中,我们发现$τ_{e-op}$随着电压的增加而减小,并且接近于$V=0.6$ V处的带电杂质散射时间$τ_{imp}=60$ fs。

英文摘要:

We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages $V>0.1$ V. The high bias electronic temperature has been calculated from shot noise measurements, and it goes up to $\sim1200$ K at $V=0.75$ V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time $τ_{e-op}$. In a 230 nm long BLG sample of mobility $μ=3600$ cm$^2$V$^{-1}$s$^{-1}$, we find that $τ_{e-op}$ decreases with increasing voltage and is close to the charged impurity scattering time $τ_{imp}=60$ fs at $V=0.6$ V.

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