Wavelength scaling law for the yield of high-order harmonic emission is theoretically examined for excited state atoms which are optically prepared by simultaneously exposing to an extreme ultraviolet pulse at the resonant wavelength and an infrared pulse at a variable wavelength in the range of 0.8\mum-2.4\mum. Numerical simulations are performed based on the three-dimensional time-dependent Schrodinger equation (3D TDSE) for Ne and H. We confirm that the harmonic yield follows a λ^-{4-6} scaling with the single fundamental driving laser pulse; whereas for the optically prepared excited state atoms, a λ^-{2-3} scaling for the harmonic yield is revealed.
A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$
我们提出了全磁g张量的$^{6}$ H $_{5/2}$ Z $_{1}$和$^{4}$ G $_{5/2}$ A $_{1}$电子状态的两个晶体学网站在Sm $^{3+}$：Y $_{2}$ SiO $_{5}$，推导出通过使用拉曼外差光谱沿9个不同的结晶方向进行。基态的最大主g值分别为0.447（1号位）和0.523（2号位），激发态的最大主g值分别为2.490（1号位）和3.319（2号位）。这些g张量的测定提供了必要的自旋哈密顿参数，可用于未来的磁性和超精细研究的Sm $^{3+}$：Y $_{2}$ SiO $_{5}$，在量子信息存储和通信设备中的应用。
Measuring autoionization decay lifetimes of optically forbidden inner valence excited states in neon atoms with attosecond noncollinear four wave mixing spectroscopy
Extending Phenomenological Crystal-Field Methods to $C_1$ Point-Group Symmetry: Characterization of the Optically-Excited Hyperfine Structure of $^{167}$Er$^{3+}$:Y$_2$SiO$_5$
