在YSZ（001）上的Gd掺杂EuO薄膜的外延、化学计量和磁性
Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)
摘要：
我们已经成功地制备出高质量的Gd掺杂的单晶EuO薄膜。使用Eu蒸馏辅助分子束外延和Gd和氧沉积速率的系统变化，我们已经能够观察到持续的逐层外延生长氧化钇稳定的立方氧化锆（001）。Gd的存在有助于稳定逐层生长模式。我们在Eu和Gd M4，5边缘使用软X射线吸收光谱来确认Eu 3+污染物的存在并确定实际Gd浓度。蒸馏过程确保膜中不存在氧空位。从磁化测量，我们发现居里温度增加作为掺杂的函数从70 K到最大值125 K平滑。在低至0.2%的浓度下未观察到阈值行为。
英文摘要：
We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.
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