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arXiv 0902.4280cond-mat.supr-concond-mat.str-el
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空穴掺杂和电子掺杂高$T_{\rm c}$超导体的高能扭折差异

Differences in the high-energy kink between hole- and electron-doped high-$T_{\rm c}$ superconductors

M. Ikeda, T. Yoshida, A. Fujimori, M. Kubota, K. Ono, Y. Kaga, T. Sasagawa, H. Takagi

摘要:

为了解释在高$T_{\rm c}$超导体中观察到的高能扭折(HEK)的起源,我们对Nd $_{1.85}$ Ce $_{0.15}$ CuO $_{4}$(NCCO)进行了角分辨光电子能谱(ARPES)研究。与空穴掺杂的HTSC相比,NCCO中的HEK的能量尺度较大,与先前的ARPES研究一致。从测量在一个很宽的动量区域,我们已经证明,之间的空穴和电子掺杂的HTSC的HEK的能量位置被移动的化学电势差的量。在$(π, 0)$附近,HEK几乎与能带底部重合,而在波节附近,能带到达非相干区,HEK出现在相干区和非相干区的边界。

英文摘要:

We have performed an angle-resolved photoemission spectroscopy (ARPES) study of Nd$_{1.85}$Ce$_{0.15}$CuO$_{4}$ (NCCO) in order to elucidate the origin of the high-energy kink (HEK) observed in the high-$T_{\rm c}$ superconductors (HTSCs). The energy scale of the HEK in NCCO is large compared with that in hole-doped HTSCs, consistent with previous ARPES studies. From measurement in a wide momentum region, we have demonstrated that between the hole- and electron-doped HTSCs the energy position of the HEK is shifted approximately by the amount of the chemical potential difference. Also, we have found that around $(π, 0)$ the HEK nearly coincides with the band bottom while around the node the band reaches the incoherent region and the HEK appears at the boundary between the coherent and incoherent regions.

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