La0.8Th 0.2OFeAs的上临界场、超导能隙和Seebeck系数
Upper critical field, superconducting energy gaps, and Seebeck coefficient in La0.8Th0.2OFeAs
摘要：
报道了一种新的电子掺杂镧氧铌酸盐超导体的合成和表征。La0.8Th0.2OFeAs的超导转变温度约为30.3K，是常压下合成的La基氧铌酸盐超导体中最高的。我们发现，在LaOFeAs中的Th掺杂的晶格参数的减少是更剧烈相比，通过高压（6 GPa）合成的缺氧LaOFeAs。电阻率和磁化率的测量产生的上临界场Hc2（0）为47 T。部分取代的Th在La诱导电子掺杂所证明的负塞贝克系数。随温度变化的磁穿透深度数据提供了强有力的证据为nodeless低能隙为1.4毫电子伏。
英文摘要：
We report the synthesis and characterization of a new electron-doped La-oxypnictide superconductor by partial substitution of lanthanum by thorium. The superconducting transition temperature at about 30.3 K was observed in La0.8Th0.2OFeAs which is the highest in La-based oxypnictide superconductors synthesized at ambient pressure. We find that the decrease in lattice parameters with Th doping in LaOFeAs is more drastic as compared to that obtained by high pressure (6 GPa) synthesis of oxygen deficient LaOFeAs. The resistivity and magnetic susceptibility measurements yield an upper critical field Hc2 (0) of 47 T. Partial substitution of Th in place of La induces electron doping as evidenced by negative Seebeck coefficient. The temperature dependent magnetic penetration depth data provides strong evidence for a nodeless low energy gap of 1.4 meV.
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