ILD顶点探测器中束致辐射电子占据率的改进估计
Improved Estimate of the Occupancy by Beamstrahlung Electrons in the ILD Vertex Detector
摘要：
基于标准的ILD模拟工具，研究了束辐射产生的非相干正负电子对对国际大型探测器（ILD）的顶点探测器（VXD）占有率的影响。对两种基本不同的传感器技术的占用率进行了评估，以估计后者的重要性。还研究了去除背散射电子的反DID场的影响。
英文摘要：
The impact of the incoherent electron-positron pairs from beamstrahlung on the occupancy of the vertex detector (VXD) for the International Large Detector concept (ILD) has been studied, based on the standard ILD simulation tools. The occupancy was evaluated for two substantially different sensor technology in order to estimate the importance of the latter. The influence of an anti-DID field removing backscattered electrons has also been studied.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
