弹道区二维电子系统的非单调磁电阻
Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime
摘要：
本文报道了二维电子系统在垂直磁场中的一种新的磁电阻（MR）行为的实验观察，当k_BTτ/ \hbar >1时，在弹道区.磁电阻随电场的增大而增大，在电场B>1/μ时磁电阻达到最大值，其中μ为电子迁移率。随着温度的增加，最大值的大小增加，其位置移动到更高的领域。这种效应是普遍的：它在各种Si和GaAs基二维电子系统中观察到。我们比较了我们的数据与最近的理论基础上的科恩异常修改磁场，并发现定性的相似性和差异。
英文摘要：
We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BTτ/\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/μ, where μis the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field, and found qualitative similarities and discrepancies.
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