使用基于MEMS的自旋晶体管的非易失性SRAM结构
Nonvolatile SRAM architecture using MOSFET-based spin-transistors
摘要：
提出并计算分析了采用金属氧化物半导体场效应晶体管（MOSFET）型自旋晶体管（称为伪自旋MOSFET（PS-MOSFET））的非易失性静态随机存取存储器（NV-SRAM）结构。PS-MOSFET是基于最近发展的磁阻随机存取存储器（MRAM）技术而提出的一种新的实现自旋晶体管功能的电路方案。所提出的NV-SRAM单元可以通过将两个PS-MOSFET连接到标准SRAM单元的存储节点来简单地配置。存储节点的逻辑信息可以通过电流感应磁化开关（CIMS）电存储到PS-MOSFET的磁性隧道结（MTJ）中，并且当逆变器环路唤醒时，存储的信息被自动恢复。此外，所提出的NV-SRAM单元对正常SRAM操作的性能没有影响。低功耗和MTJ设计的高度自由度也是采用PS-MOSFET的NV-SRAM的显著特点。
英文摘要：
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET (PS-MOSFET). PS-MOSFET is a new circuit approach to reproduce the functions of spin-transistors, based on recently progressed magnetoresistive random access memory (MRAM) technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell. The logic information of the storage nodes can be electrically stored into the magnetic tunnel junctions (MTJs) of the PS-MOSFETs by current-induced magnetization switching (CIMS), and the stored information is automatically restored when the inverter loop circuit wakes up. In addition, the proposed NV-SRAM cell has no influence on the performance of normal SRAM operations. Low power dissipation and high degree of freedom of MTJ design are also remarkable features for NV-SRAM using PS-MOSFETs.
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