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arXiv 0901.0072cond-mat.mes-hall
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石墨烯中的量子Goos-Hanchen效应

Quantum Goos-Hanchen effect in graphene

C. W. J. Beenakker, R. A. Sepkhanov, A. R. Akhmerov, J. Tworzydlo

摘要:

古斯-汉臣(GH)效应是对界面处的全内反射的干涉效应,导致反射光束沿着界面的偏移σ。我们发现石墨烯中p-n界面的GH效应依赖于无质量狄拉克费米子的赝自旋(亚晶格)自由度,并发现入射角α *=arcsin[sin alpha_c]^1/2处的σ的符号变化由全反射的临界角α_c决定.在具有p掺杂边界的n掺杂沟道中,GH效应使最低传播模式的简并度加倍,在通常的自旋和谷简并度之上引入两倍简并度。这可以观察到,随着沟道宽度的增加,电导逐步增加8e^2/h。

英文摘要:

The Goos-Hanchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha*=arcsin[sin alpha_c]^1/2 determined by the critical angle alpha_c for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a two-fold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e^2/h of the conductance with increasing channel width.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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