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arXiv 0812.4754cond-mat.mtrl-scicond-mat.other
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太赫兹泵浦太赫兹探测技术探测InSb中的碰撞电离

Impact ionization in InSb probed by THz-pump THz-probe spectroscopy

Matthias C. Hoffmann, Janos Hebling, Harold Y. Hwang, Ka-Lo Yeh, Keith A. Nelson

摘要:

在200 K和80 K下研究了宽带远红外辐射激发下锑化铟(InSb)中皮秒载流子的动力学。采用一种新颖的太赫兹泵浦/太赫兹探测方案,泵浦太赫兹场为100 kV/cm,强度为100 MW/cm^2,我们观察到了载流子加热和碰撞电离。产生的载流子数超过10^16 cm-3,对应于80 K时载流子密度变化Δ N/N为700%。在1.2 THz处的良好定义的吸收峰的开始是由于热电子的冷却而导致的LO和LA声子群的变化的指示。

英文摘要:

Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below-bandgap broadband far infrared radiation were investigated at 200 K and 80 K. Using a novel THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm^2, we observed carrier heating and impact ionization. The number of carriers produced exceeds 10^16 cm-3, corresponding to a change in carrier density Delta N/N of 700% at 80K. The onset of a well defined absorption peak at 1.2 THz is an indication of changes in LO and LA phonon populations due to cooling of the hot electrons.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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