Autocatalytic MBE growth of GaAs nanowires on oxidized Si(100)

Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth t…

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., is mu…

外延 RuO2 的固态源金属有机分子束外延

Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2

本文提出用固态源金属有机分子束外延在低温下生长高质量外延 RuO2 薄膜，解决了 Ru 难蒸发且难氧化的问题，并系统研究了生长条件对薄膜结构与电学性质的影响。