模拟自吸引的晶体生长模型
Model of crystal growth with simulated self-attraction
摘要：
介绍了模拟自吸引和随机顺序或平行动力学的（1+1）维晶体生长动力学模型，并利用蒙特卡罗模拟对其进行了研究。为了模拟吸收原子的吸引力，沉积的概率被选择为取决于沉积原子周围的最近邻原子的数量，因此它随着该数量而增加。蒸发概率也被选择来粗略地解释这种自吸引。该模型表现出界面脱钉过渡与KPZ型粗糙度行为的运动相。关联长度的临界指数为$ν_\parallel = 0.82 \pm 0.03,{\rm{}}ν_ \bot = 0.55 \pm 0.02$，增长速度的临界指数为$1.08 \pm 0.03$，表明了脱钉转变的新普适性类别。该模型的关键属性不依赖于所实施的动态类型。
英文摘要：
The (1+1)-dimensional kinetic model of crystal growth with simulated self-attraction and random sequential or parallel dynamics is introduced and studied via Monte-Carlo simulations. To imitate the attraction of absorbing atoms the probability of deposition is chosen to depend on the number of the nearest-neighbor atoms surrounding the deposited atom so it increases with this number. As well the evaporation probabilities are chosed to roughly account for this self-attraction. The model exhibits the interface depinning transition with KPZ-type roughness behavior in the moving phase. The critical indices of the correlation lengths are $ν_\parallel = 0.82 \pm 0.03,{\rm{}}ν_ \bot = 0.55 \pm 0.02$ and the critical index of the growth velocity is $1.08 \pm 0.03$ indicating the new universality class of the depinning transition. The critical properties of the model do not depend on the type of dynamics implemented.
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