离子束改性GaMnAs外延层的磁性
Ion-beam modification of the magnetic properties of GaMnAs epilayers
摘要：
我们研究了通过用高能离子束照射样品来控制GaMnAs中的缺陷的引入，所述高能离子束修改DMS的磁性。我们的研究集中在低载流子密度制度，开始与生长的GaMnAs薄膜，甚至进一步减少载流子的数量，通过一系列的辐照剂量。我们做了系统的研究磁化作为温度和辐照离子剂量的函数。我们还进行了原位室温电阻率测量作为离子剂量的函数。我们观察到，样品的磁性和输运性质可以通过控制离子束参数进行实验操作。对于高度辐照的样品，磁测量表明形成的磁性团簇一起过渡到绝缘状态。实验数据进行了比较，平均场计算磁化。在计算中的无序和载流子密度的独立控制允许进一步了解这两个因素在离子束诱导的改性GaMnAs中的单独作用。
英文摘要：
We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in-situ room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.
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