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arXiv 0811.2455cond-mat.mtrl-sci
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半导体MnTe中Fe取代Mn形成的半金属亚铁磁体

Half-metallic ferrimagnet formed by substituting Fe for Mn in semiconductor MnTe

Li-Fang Zhu, Bang-Gui Liu

摘要:

用精确的第一性原理计算预测了以25%的Fe取代锌半导体MnTe中的Mn构成的三元亚铁磁半金属.它具有0.54eV的大半金属带隙(HM),其亚铁磁序对其他磁涨落非常稳定。HM亚铁磁性的形成是因为反铁磁MnTe中的完全磁矩补偿被Fe取代的MnTe中的不完全磁矩补偿所取代。这将为新的HM材料提供一种新的方法。由于Fe与Mn具有良好的亲和性,可以制备半金属,并且可用于自旋电子学。

英文摘要:

A ternary ferrimagnetic half-metal, constructed through substituting 25% Fe for Mn in zincblende semiconductor MnTe, is predicted in terms of accurate first-principles calculations. It has a large half-metallic (HM) gap of 0.54eV and its ferrimagnetic order is very stable against other magnetic fluctuations. The HM ferrimagnetism is formed because the complete moment compensation in the antiferromagnetic MnTe is replaced by an uncomplete one in the Fe-substituted MnTe. This should make a novel approach to new HM materials. The half-metal could be fabricated because Fe has good affinity with Mn, and useful for spintronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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