半导体中光生等离子体的热化过程
Thermalization process of a photo-generated plasma in semiconductors
摘要：
从理论上研究了半导体系统中导致光激发等离子体热化条件的超快过程动力学。我们分析了由有限光脉冲产生的载流子数的时间演化，从脉冲的开始直到载流子数达到准平衡条件的时间。我们计算了沿系统通过的不同阶段的主要相互作用机制引起的能量通量。我们的分析是通过使用一组非线性速率方程，该方程支配的载流子在能量空间中的人口的时间演化。我们认为主要的相互作用机制，包括动态屏蔽和声子布居效应。
英文摘要：
The kinetics of ultra-fast processes which leads to the thermalization condition of a photo-excited plasma in semiconductor systems is studied theoretically. We analyze the time evolution of a carrier population generated by a finite optical pulse, from the beginning of the pulse until the time in which the carrier population reaches a quasi-equilibrium condition. We calculate the energy fluxes caused by the main interaction mechanisms along the different stages the system passes through. Our analysis is done by using a set of non-linear rate equations which govern the time evolution of the carrier population in the energy space. We consider the main interaction mechanisms, including dynamic screening and phonon population effects.
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