磁场中石墨表面缺陷附近准二维电子态的局域分布
Localized Distributions of Quasi Two-Dimensional Electronic States near Defects Artificially Created at Graphite Surfaces in Magnetic Fields
摘要：
用扫描隧道谱（STS）测量了强磁场下高取向热解石墨（HOPG）表面由Ar离子溅射产生的准二维电子系统（2DES）缺陷附近的局域态密度。在朗道能级谱的谷能量处，我们发现了两个典型的局域分布的2DES依赖于缺陷。这些是在以前的STS工作中在点缺陷附近的HOPG表面上没有观察到的新类型的分布[Y。新实\textit{et al} .，物理修订版信函{ \bf 97}，236804（2006）.]。随着能量的增加，我们观察到从局域分布逐渐转变为扩展的整数量子霍尔态的预期。我们表明，缺陷的潜在深度是负责的两个本地化的分布与理论计算比较。
英文摘要：
We measured the local density of states of a quasi two-dimensional electron system (2DES) near defects, artificially created by Ar-ion sputtering, on surfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunneling spectroscopy (STS) in high magnetic fields. At valley energies of the Landau level spectrum, we found two typical localized distributions of the 2DES depending on the defects. These are new types of distributions which are not observed in the previous STS work at the HOPG surface near a point defect [Y. Niimi \textit{et al}., Phys. Rev. Lett. {\bf 97}, 236804 (2006).]. With increasing energy, we observed gradual transformation from the localized distributions to the extended ones as expected for the integer quantum Hall state. We show that the defect potential depth is responsible for the two localized distributions from comparison with theoretical calculations.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
