多孔硅模板上铌薄膜的超导特性
Superconducting properties of Nb thin films deposited on porous silicon templates
摘要：
多孔硅，通过电化学蚀刻获得，已被用作纳米穿孔铌薄膜的生长衬底。通过UHV磁控溅射在多孔Si衬底上沉积的膜继承了它们的由直径为5或10 nm且间距为10至40 nm的孔制成的结构，这提供了人工钉扎结构。通过在磁场存在下对不同膜厚和不同孔间距的衬底进行输运测量，研究了其超导性能。超导上临界场的测量显示了一些特殊的特征，如H_c2（T）曲率的变化和超导电阻转变宽度随磁场变化的振荡。这个字段值是远远高于典型的匹配领域穿孔超导体，作为一个结果的小interpore距离。
英文摘要：
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made of holes of 5 or 10 nm diameter and of 10 to 40 nm spacing, which provide an artificial pinning structure. The superconducting properties were investigated by transport measurements performed in the presence of magnetic field for different film thickness and substrates with different interpore spacing. Perpendicular upper critical fields measurements present peculiar features such as a change in the H_c2(T) curvature and oscillations in the field dependence of the superconducting resistive transition width at H=1 Tesla. This field value is much higher than typical matching fields in perforated superconductors, as a consequence of the small interpore distance.
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