Qualitative explanation of the temperature behaviors of the transport properties and magnetic susceptibility of high-temperature superconductors in the normal state
A model based on the alternating structure of the imbedded conduction layers (the Cu-O2 planes) with the charge-transfer-insulator (CTI) layers is proposed. There are three kinds of carriers, each with a different behavior: conduction-like holes in the Cu-O2 layers and electrons and normal holes in the CTI matrix between the Cu-O2 layers. This structure explains the strong anisotropies. The relationship is obtained between the concentration nq of conduction-like holes in the Cu-O2 layers and the temperature T. The anomalous temperature behavior of the resistivity as well as the Hall constant also follows. We give the hole density in ab plane a definite physical meaning, and also define explicitly optimal doping, overdoping and underdoping. Our model gives the correct temperature dependence of the resistivity and the hole constant on optimal doping, overdoping and underdoping, and it predicts the temperature behavior of the cotangent of the Hall angle quite well. Based on this model, we can also understand that the HiTc materials become "Fermi Liquids" in the extremely overdoped region, and the dR/dT becomes negative below some temperature T<1.211T0 in the underdoped case. Based on this model, the thermal behaviors of the magnetic susceptibility in different doping can also be easily explained. The resistivity along c-axis is discussed.
A Model of the Normal State Susceptibility and Transport Properties of Ba (Fe1-xCox)2As2: An Explanation of the Increase of Magnetic Susceptibility with Temperature
Enhancement of Nuclear Spin-Lattice Relaxation Rate and Spin Susceptibility due to Valence Fluctuations -Origin of Anomalously Enhanced Wilson Ratio in Ce and Yb Systems-
Origin of Orthorhombic Transition, Magnetic Transition, and Shear Modulus Softening in Iron Pnictide Superconductors: Analysis based on the Orbital Fluctuation Theory
Cuprates phase diagram deduced from magnetic susceptibility: what is the `true' pseudogap line?
高$T_c$铜氧化物超导体的文献中主要有两种相互矛盾的相图。赝能隙线是否穿过超导$T_c$ -圆顶？为了回答这个问题，我们重新研究了四种不同化合物的实验磁化率和奈特位移，La $_{1-x}$ Sr $_x$ CuO $_4$、Bi $_2$ Sr $_2$ Ca $_{1-x}$ Y $_x$ Cu $_2$ O $_8$、Bi $_2$ Sr $_2$ CaCu $_2$ O $_{8+y}$和YBa $_2$ Cu $_3$ O $_{6+y}$，它们是温度和掺杂的函数。磁化率可以通过具有磁性和电子贡献的所有材料的相同函数来描述。前者是二维反铁磁（AF）正方形晶格响应，具有磁关联$T_{max}$的特征温度。后者是“泡利”项，揭示了在赝能隙温度$T^*$下电子态密度的能隙开放。从精确拟合的数据，我们发现，$T_{max}(p)$作为掺杂（$p$）的函数在很宽的范围内线性下降，但在过掺杂制度突然饱和。伴随地，$T^*(p)$与圆顶呈{ \it线性且相切}，在圆顶的顶部处与$T_{max}(p)$交叉或接近，指示从欠掺杂到过掺杂状态的性质变化。相反的想法，pseudogap终止以上的最佳掺杂，我们的分析表明，整个相图中存在的差距。这与在$T_c$之上由于空穴对或“对”而产生的假间隙一致。我们的结论是，$T_{max}$，反映AF磁关联，往往被误解为赝隙温度$T^*$。
Muon-spin-relaxation and magnetic-susceptibility studies of effects of the magnetic impurity Ni on the Cu-spin dynamics and superconductivity in La_2-x_Sr_x_Cu_1-y_Ni_y_O_4_ with x = 0.13
