The remarkable transport properties of graphene follow not only from the the Dirac-like energy dispersion, but also from the chiral nature of its excitations, which makes unclear the limits of applicability of the standard semiclassical Boltzmann approach. In this paper we provide a quantum derivation of the transport scattering time in graphene in the case of electron-phonon interaction. By using the Kubo formalism, we compute explicitly the vertex corrections to the dc conductivity by retaining the full chiral matrix structure of graphene. We show that at least in the regime of large chemical potential the Boltzmann picture is justified, and it is also robust against a small sublattice inequivalence which partly spoils the role of chirality.
The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e. doping level), are presented.
The next-nearest neighbor interaction (NNN) is included in a tight-binding calculation of the electronic spectrum and conductivity of doped graphene. As a result, we observe a wide variation of the conductivity behavior, since the Fermi energy and the resonance peak are not shifted by the same amount. Such effect can have a profound effect in the idea of explaining the minimal conductivity of graphene as a consequence of impurities or defects. Finally, we also estimate the mean free path and relaxation time due to resonant impurity scattering.
Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective t…
We measure the photoluminescence spectra for an array of modulation doped, T-shaped quantum wires as a function of the 1d density n_e which is modulated with a surface gate. We present self-consistent electronic structure calculations for this device which show a bandgap renormalization which, when corrected for excitonic energy and its screening, are largely insensitive to n_e and which are in quantitatively excellent agreement with the data. The calculation (cf. cond-mat/9908349) shows the importance of including orthogonality between the screening electrons and the electron(s) bound to the …
We present a theory of the influence of band renormalization and excitonic electron-electron interaction effects on the optical conductivity $σ(ω)$ of doped bilayer graphene. Using the Keldysh formalism, we derive a kinetic equation from which we extract numerical and approximate analytic results for $σ(ω)$. Our calculations reveal a previously unrecognized mechanism which couples the Drude and interband response and renormalizes the plasmon frequency, and suggest that screening must play an essential role in explaining the weakly renormalized conductivity seen in recent experiments.
In this study, the Optical conductivity of substitutionary doped graphene is investigated in presence of the Rashba spin orbit coupling (RSOC). Calculations have been performed within the coherent potential approximation (CPA) beyond the Dirac cone approximation. Results of the current study demonstrate that the optical conductivity is increased by increasing the RSOC strength. Meanwhile it was observed that the anisotropy of the band energy results in a considerable anisotropic optical conductivity (AOC) in monolayer graphene. The sign and magnitude of this anisotropic conductivity was shown …
The generalized self-consistent field method is used to describe intraband relaxation processes in a general multiband electronic system with presumably weak residual electron-electron interactions. The resulting memory-function conductivity formula is shown to have the same structure as the result of a more accurate approach based on the quantum kinetic equation. The results are applied to heavily doped and lightly doped graphene. It is shown that the scattering of conduction electron by phonons leads to the redistribution of the intraband conductivity spectral weight over a wide frequency ra…
The interband and intraband conductivities of doped graphene were theoretically investigated beyond the linear response. The new dependences of induced currents on frequency and amplitude of external electric field, the graphene temperature and chemical potential were determined for sufficiently strong electric fields in the resonant approximation. Particularly, the saturation of induced currents and the non-linear increase of optical transparency with wave intensity growth were obtained for arbitrary temperatures and doped situation. As contrasted to increase for the interband transitions at …
Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore such remote doping helps surpassing the intraband (Drude) absorption and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temp…
We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew scattering and side jump contributions to the spin Hall conductance. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [Science 306, 1910 (2004)].
Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20-25% of the universal ac conductivity for graphene on polar substrates due to strong electron-SPP coupling. The midgap absorption, moreover, strongly depends on the substrates and doping levels used. With increasing temperature, the…
We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it significantly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 Ω-1 cm-1 is obtained for modulation-doped samples at 50 K, in a sharp contrast to vanishingly small values for undoped samples at the same temperature. We attribute the enhancement to the change of Fermi…
The electron-phonon coupling in potassium-doped graphene on Ir(111) is studied via the renormalization of the pi* band near the Fermi level, using angle-resolved photoemission spectroscopy. The renormalization is found to be fairly weak and almost isotropic, with a mass enhancement parameter of lambda= 0.28(6) for both the K-M and the K-G direction. These results are found to agree well with recent first principles calculations.
We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based on magneto-resistance studies at low temperatures. Also, low temperature electrical conductivity can show weakly localized transport in 3D combined with the effect of electron-electron interactions in these materials, which is remarkably different from the conductivity in 2DWL or strong localization regime. The corresponding dephasing time of electronic wav…
We discuss the dynamical polarization, plasmon dispersion, relaxation time, and the Friedel oscillation of screened potential of the two-dimension Dirac and three-dimension Weyl system (which are gapped) in the low-energy tigh-binding model. The results, like the Fermi wavevector, Thomas-Fermi wavevector, and longitudinal conductivity are obtained in different dimensions. Some important conclusions are detailedly discussed in this paper, including the screening character under short or long range Coulomb interaction, and the longitudinal conductivity in two- or three-dimensions. The longitudin…
We investigate the conductivity of doped graphene in the semiclassical Boltzmann limit, as well as the conductivity minimum within the self-consistent transport theory. Using the hard-disk model for a two-dimensional distribution of impurities gives rise to both strong increase in the slope of conductivity at low charge carrier densities in graphene and a strongly sub-linear behavior of the conductivity at high charge carrier densities when the correlation distance between the impurities is large. On the other hand, we find that a super-linear dependence of the conductivity on charge carrier d…
Highly doped Poly(3,4-ethylenedioxythiophene) or PEDOT is a conductive polymer with a wide range of applications in energy conversion due to its ease of processing, optical properties and high conductivity. The latter is influenced by processing conditions, including formulation, annealing, and solvent treatment of the polymer, which also affects the polymer arrangement. Here we show that the analysis of the optical spectra of PEDOT domains reveals the nature and magnitude of the structural disorder in the material. In particular, the optical spectra of objects on individual domains can be use…
Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons scan the electronic structure of the bottom Fe-C interface. The shot-noise shows a Poissonian character. This demonstrates a pure spin dependent direct tunneling mechanism and validates the high struct…
Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at the low doping density that is most relevant to realistic experiments and devices. Here we develop a first-principles-based effective-mass model within the GW approximation and show a dramatic band gap renormalization of a few hundred meV for typical 2D semiconductors. Moreover, we reveal the roles of different many-electron interactions: The Coulomb-hole co…
We demonstrate that the plasmon frequency and Drude weight of the electron liquid in a doped graphene sheet are strongly renormalized by electron-electron interactions even in the long-wavelength limit. This effect is not captured by the Random Phase Approximation (RPA), commonly used to describe electron fluids and is due to coupling between the center of mass motion and the pseudospin degree of freedom of the graphene's massless Dirac fermions. Making use of diagrammatic perturbation theory to first order in the electron-electron interaction, we show that this coupling enhances both the plas…
We present a general formulation to calculate the dynamic optical conductivity, beyond the linear response regime, of any electronic system whose quasiparticle dispersion is described by a two band model. Our phenomenological model is based on the optical Bloch equations. In the steady state regime it yields an analytic solution for the population inversion and the interband coherence, which are nonlinear in the optical field intensity, including finite doping and temperature effects. We explicitly show that the optical nonlinearities are controlled by a single dimensionless parameter which is…
The thermal conductivity of doped graphene flake of finite size is investigated with emphasis on the influence of mass of substituting atoms on this property. It is shown that the graphene doping by small concentrations of relatively heavy atoms results in a disproportionately impressive drop of lattice thermal conductivity.
We studied the conductance renormalization and conductivity of multi-subband Tomonaga-Luttinger models with inter-subband interactions. We found that, as in single-band systems, the conductance of a multi-subband system with an arbitrary number of subbands is not renormalized due to interaction between electrons. We derived a formula for the conductivity in multi-subband models. We applied it to a simplified case and found that inter-subband interaction enhances the conductivity, which is contrary to the intra-subband repulsive interaction, and that the conductivity is further enhanced for a l…
The quasiparticle band-gap renormalization induced by the doped carriers is an important and well-known feature in two-dimensional semiconductors, including transition-metal dichalcogenides (TMDs), and it is of both theoretical and practical interest. To get a quantitative understanding of this effect, here we calculate the quasiparticle band-gap renormalization of the electron-doped monolayer MoS$_2$, a prototypical member of TMDs. The many-body electron-electron interaction induced renormalization of the self-energy is found within the random phase approximation and to account for the quasi-…
We study electrical and optical conductivities of hole gas in $p$-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various impurity potentials, Drude weight and optical conductivity in terms of the Luttinger parameters $γ_1 $ and $γ_2$. The back scattering is completely suppressed as a result of the helicity conservation of the heavy and light hole states. We find that the inverse relaxation time of heavy holes is much less than that of the light holes for Coulomb-type and Gaus…
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function - is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential co…
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the quantum Hall effect regime can be well described by a hopping law (R_{xx} \propto exp{-(T_0/T)^p}) with p=0.6. We discuss this result in terms of variable range hopping in a Coulomb gap together with a dependence of the electron localization length on the energy in the gap. The value of the exponent p>0.5 shows that electron-electron interactions have to be …
We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hal…
We consider a Weyl semimetal (WSM) with finite doping and tilt within a continuum model Hamiltonian with both broken time reversal and inversion symmetry. We calculate the absorptive part of the anomalous AC Hall conductivity as a function of photon energy ($Ω$) for both type I and type II Weyl semimetal. For a given Weyl node, changing the sign of its chirality or of its tilt changes the sign of its contribution to the absorptive Hall conductivity with no change in magnitude. For a noncentrosymmetric system we find that there are ranges of photon energies for which only the positive or only t…
We observe an inversion of the low temperature dependence for the conductivity of doped GaAs by application of a magnetic field. This inversion happens when Wct = 1, as predicted by Houghton (PRB25, 2196, 1982) for the correction to conductivity due to screened Coulomb repulsion in the diffusive regime. This correction follows the oscillating behavior of the transport elastic time entering the Shubnikov-de Haas regime. For Wct > 1, we observe that the Hartree part of the interaction correction is suppressed. Moreover, the total correction seems strongly reduced although its dependence stays lo…
The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a diffusive metal, despite the difference in the physical mechanisms involved. The electron-electron interaction modifies this regime, and plays a role similar to that of the environment in macroscopic quantum phenomena. We show that interactions, and the presence of external gates, change substantially the transport properties, and can lead to a diverging re…
The two-loop interaction correction coefficient to the universal ac conductivity of disorder-free intrinsic graphene is computed with the help of a field theoretic renormalization study using the BPHZ prescription. Non-standard Ward identities imply that divergent subgraphs (related to Fermi velocity renormalization) contribute to the renormalized optical conductivity. Proceeding either via density-density or via current-current correlation functions, a single well-defined value is obtained: $\mathcal{C}= (19-6π)/12) = 0.01$ in agreement with the result first obtained by Mishchenko and which i…
Starting from a three dimensional Hamiltonian, we study the optical properties of ultra-thin topological insulator slabs for which the coupling between Dirac fermions on opposite surfaces results in two degenerated gapped hyperbolic bands. The gap is a threshold for the optical absorption and translates in a peak in the imaginary part of the optical conductivity. An exchange field applied perpendicular to the slab splits the degenerated hyperbolic bands and a double step structure come out in the optical absorption, whereas a double peak structure appears in the imaginary part of the longitudi…
The single-band current-dipole Kubo formula for the dynamical conductivity of heavily doped graphene from Kupčić [Phys. Rev. B 91, 205428 (2015)] is extended to a two-band model for conduction $π$ electrons in lightly doped graphene. Using a posteriori relaxation-time approximation in the two-band quantum transport equations, with two different relaxation rates and one quasi-particle lifetime, we explain a seemingly inconsistent dependence of the dc conductivity $σ^{\rm dc}_{αα}$ of ultraclean and dirty lightly doped graphene samples on electron doping, in a way consistent with the charge cont…
From the Kubo formula for transport in a tilted Weyl semimetal we calculate the absorptive part of the dynamic conductivity for both right and left handed circular polarized light. These depend on the real part of the longitudinal conductivity and the imaginary part of the transverse (Hall) conductivity. We include the effect of the chiral anomaly which pumps charge from negative to positive chirality node when the usual ${\bs E}\cdot{\bs B}$ term is included in the electrodynamics and obtain analytic expressions. To calculate the Hall angle we further provide expressions for the imaginary par…
The aim of this work is to study the electron transport in graphene with impurities by introducing a generalization of linear response theory for linear dispersion relations and spinor wave functions. Current response and density response functions are derived and computed in the Boltzmann limit, showing that in the former case, a minimum conductivity appears in the no-disorder limit. In turn, from the generalization of both functions, an exact relation can be obtained that relates both. Combining this result with the relation given by the continuity equation, it is possible to obtain general …
In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as $σ_{xy}^{SJ}/σ_{xy}^{SS} \sim (\hbar/τ)/ε_F$, with $τ$ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining $σ_s/σ_c \sim 10^{-3}-10^{-4}$ where $σ_{s(c)}$ is the spin Hall (charge) conductivity, which is in rea…
Conductivity noise in dc current biased La_{0.82}Ca_{0.18}MnO_{3} single crystals has been investigated in different metastable resistivity states enforced by applying voltage pulses to the sample at low temperatures. Noise measured in all investigated resistivity states is of 1/f-type and its intensity at high temperatures and low dc bias scales as a square of the bias. At liquid nitrogen temperatures for under bias exceeding a threshold value, the behavior of the noise deviates from above quasi- equilibrium modulation noise and depends in a non monotonic way on applied bias. The bias range o…
The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are determined from the experimentally observed magnetic field and temperature dependences of the velocity and the attenuation of a surface acoustic wave. It is demonstrated that in the structures studied the mechanism of low-temperature conductance near the QHE plateau centers is hopping. It is also shown that at magnetic fields corresponding to filling factors 2 and …
Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We present weak localization measurements of epitaxial graphene with lithium adatoms that separately quantify intra- and intervalley scattering rates, then compare the measurements to tight-binding calculation…
Low frequency noise in current biased La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ single crystals has been investigated in a wide temperature range from 79 K to 290 K. Despite pronounced changes in magnetic properties and dissipation mechanisms of the sample with changing temperature, the noise spectra were found to be always of the 1/f type and their intensity (except the lowest temperature studied) scaled as a square of the bias. At liquid nitrogen temperatures and under bias exceeding some threshold value, the behavior of the noise deviates from the quasi-equilibrium modulation noise and starts to depe…
The effect due to doping by B, Si, N on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by the type of dopant and doping concentration. The contribution from the guest atoms may open a band gap, thereby giving rise to the rich Landau level energy spectra and consequently the unique quantum Hall conductivity. The Fermi energy-dependent quantum Hall effect appears as a step structure having both integer and half-integer plateaus. Dop…
