含Ga（Mn）As层的半导体结构中锰扩散诱导的n掺杂
Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers
摘要：
使用铁磁半导体作为自旋注入器的半导体结构是未来自旋电子器件的有前途的系统。在这里，我们提出了结合光致发光（PL）和时间分辨的磁光实验的名义上的量子阱（QW）从铁磁Ga（Mn）As层分离的薄屏障。由于PL的部分淬灭，我们得出结论，有一个显着的Mn反扩散到量子阱。此外，从时间分辨的测量，我们推断，Mn导致在量子阱内的n型掺杂，并且，此外，强烈地增加电子自旋退相时间。
英文摘要：
Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type doping within the QW, and, in addition, strongly increases the electron spin dephasing time.
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