arXiv 0809.21132008-09-12cond-mat.othercond-mat.mtrl-sci

离子束在FinFETs中引起的电流变化

Mapping of ion beam induced current changes in FinFETs

C. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. Cabrini, D. Olynick, S. Duhey, T. Schenkel

备注：: IBMM 2008 conference proceeding
DOI：: 10.1016/j.nimb.2009.01.019

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摘要：

我们报告的进展，离子注入硅器件与扫描探针对准。用扫描力显微镜（SFM）对该器件成像，并在晶体管表面上扫描对准的氩束（20 keV，36 keV）。SFM尖端的杠杆中的孔将氩束准直到直径为1.6 μ m和100 nm的尺寸。由于在氧化物区域中形成正电荷，离子撞击扰乱沟道电流。源极-漏极电流的感应变化记录在离子束相对于FinFET的位置的依赖。获得了响应于离子束的局部区域的地图。

英文摘要：

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

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