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arXiv 0809.1215cond-mat.supr-concond-mat.mes-hall
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非对称高TC DC SQUID的电压-电流和电压-磁通特性

Voltage-current and voltage-flux characteristics of asymmetric high TC DC SQUIDs

I. L. Novikov, Ya. S. Greenberg, V. Schultze, R. IJsselsteijn, H. -G. Meyer

摘要:

我们报告的20个芯片上的高T $_C$ DC SQUID的传递函数和通量的变化,其中一半是故意的几何不对称的测量。所有这些SQUID都是使用标准的高T $_C$薄膜技术制造的,并且它们是单层SQUID,具有通过激光烧蚀沉积到MgO双晶衬底上的140 nm厚度的YBa $_2$ Cu $_3$ O $_{7-x}$膜,具有24 $^0$取向差角。对于每一个SQUID,它的固有不对称性参数,i。例如,直接独立地测量每个结的临界电流密度和电阻率。我们发现SQUID的电压-电流和电压-磁通特性在片上扩散的主要原因是SQUID的固有不对称性。我们发现,对于SQUID与一个相对较大的电感($L>120 $ pH)的电压调制和传递函数是不是很敏感的结的不对称性,而SQUID与较小的电感($L\simeq 65-75 $ pH)更敏感。所得结果对高T $_C$ SQUID阵列和光栅敏感器件的实现具有重要意义。

英文摘要:

We report measurements of transfer functions and flux shifts of 20 on-chip high T$_C$ DC SQUIDs half of which were made purposely geometrically asymmetric. All of these SQUIDs were fabricated using standard high T$_C$ thin film technology and they were single layer ones, having 140 nm thickness of YBa$_2$Cu$_3$O$_{7-x}$ film deposited by laser ablation onto MgO bicrystal substrates with 24$^0$ misorientation angle. For every SQUID the parameters of its intrinsic asymmetry, i. e., the density of critical current and resistivity of every junction, were measured directly and independently. We showed that the main reason for the on-chip spreading of SQUIDs' voltage-current and voltage-flux characteristics was the intrinsic asymmetry. We found that for SQUIDs with a relative large inductance ($L>120 $ pH) both the voltage modulation and the transfer function were not very sensitive to the junctions asymmetry, whereas SQUIDs with smaller inductance ($L\simeq 65-75 $ pH) were more sensitive. The results obtained in the paper are important for the implementation in the sensitive instruments based on high T$_C$ SQUID arrays and gratings.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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