Fe $\mid$ ZnSe双结中隧道磁电阻的增强
Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions
摘要：
计算了Fe $\mid$ ZnSe $\mid$ Fe $\mid$ ZnSe $\mid$ Fe（001）双磁隧道结的隧穿磁电阻（TMR）随中间Fe层厚度的变化，并与Fe $\mid$ ZnSe $\mid$ Fe简单结的结果进行了比较.的电子能带结构建模的参数化紧束缚哈密顿适合{ \it从头计算}计算，和电导内的Landauer形式主义表示的格林函数计算。我们发现，每个自旋通道和TMR的电导强烈依赖于中间的Fe层的厚度，在某些情况下，它们被增强相对于简单的结，在定性协议与最近的实验研究进行类似的系统。通过使用一个二维双结作为一个简化的系统，我们表明，电导增强可以解释的结能谱。这些结果与自旋电子学有关，因为它们表明双结中的TMR可以通过改变中间金属层的厚度来调谐和增强。
英文摘要：
We calculate the tunneling magnetoresistance (TMR) of Fe$\mid$ZnSe$\mid$Fe$\mid$ZnSe$\mid$Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe$\mid$ZnSe$\mid$Fe simple junctions. The electronic band structures are modeled by a parametrized tight-binding Hamiltonian fitted to {\it ab initio} calculations, and the conductance is calculated within the Landauer formalism expressed in terms of Green's functions. We find that the conductances for each spin channel and the TMR strongly depend on the in-between Fe layer's thickness, and that in some cases they are enhanced with respect to simple junctions, in qualitative agreement with recent experimental studies performed on similar systems. By using a 2D double junction as a simplified system, we show that the conductance enhancement can be explained in terms of the junctions energy spectrum. These results are relevant for spintronics because they demonstrate that the TMR in double junctions can be tuned and enhanced by varying the in-between metallic layer's thickness.
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