金属化$β$ - SiC（001）表面的能带弯曲和准二维电子气
Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface
摘要：
研究了氢吸附诱导$β$ -SiC（001）富硅表面金属化的机理。我们分析了能带弯曲的影响，并证明了准二维电子气的存在，这源于从吸附氢到体导电态的电子捐赠。我们还提供了一个简单的模型，捕捉的主要特点的第一性原理计算的结果，并揭示了该过程的基本物理。
英文摘要：
We study the mechanism leading to the metallization of the $β$-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
