硅（100）上应变硅化钬纳米岛的中能离子散射研究
Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)
摘要：
我们用中能离子散射（MEIS）定量分析了生长在Si（100）表面的硅化钬岛的结构。结构拟合的实验数据明确表明，四硅化物相存在，而不是六方相，这是与纳米线的生长在亚单层覆盖。岛形成的较低的钬覆盖率为3 ML也被证明是tetraphylocene，这表明，六方结构是不是一个低覆盖率的前体生长的tetraphylocene相。MEIS模拟的大型纳米岛，其中包括横向应变救济的影响，已经进行，这些比较以及与实验数据。
英文摘要：
We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide phase is present and not the hexagonal phase, which is associated with the growth of nanowires at submonolayer coverages. Islands formed with a lower holmium coverage of 3 ML are also shown to be tetragonal, which suggests that the hexagonal structure is not a low coverage precursor to the growth of the tetragonal phase. MEIS simulations of large nanoislands, which include the effects of lateral strain relief, have been performed and these compare well with the experimental data.
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